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研究生: 林佳漢
論文名稱: 應用錫膏回融快速填滿矽穿孔連接器技術之研究
A Study of Fast Filling Through Silicon Via Interconnects Using Solder Reflow Technology
指導教授: 方維倫
口試委員: 鄭裕庭
林炯文
方維倫
學位類別: 碩士
Master
系所名稱: 工學院 - 動力機械工程學系
Department of Power Mechanical Engineering
論文出版年: 2012
畢業學年度: 100
語文別: 中文
論文頁數: 81
中文關鍵詞: 矽穿孔錫膏回融三維積體電路整合
外文關鍵詞: TSV, Solder Reflow, 3D IC Integration
相關次數: 點閱:3下載:0
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  •   本論文利用錫膏本身的強大內聚力,搭配溝槽(Cavity)與矽穿孔(Through Silicon Via, TSV)幾何尺寸的限制,使得熔融狀態的錫膏,擁有快速填滿矽穿孔連接器之優勢。本文提出的技術可克服目前普遍使用的電鍍銅填滿矽穿孔技術問題,此技術能大幅降低填滿矽穿孔之時間,如果不考慮加熱與冷卻錫膏的時間,其成形時間只需數秒。並能大幅簡化電鍍銅填滿矽穿孔之製程步驟,使用一次性錫膏回融,即可同時形成微凸塊(Micro Pad)、微錫球(Micro Bump)與矽穿孔。可利用錫膏本身的內聚力,改善電鍍銅製程容易產生空孔之缺點。本研究除了使用數值軟體提供設計參數外,也會實際將此技術應用於中介層與微機電熱制動器中,並使用三維積體電路整合(3D IC Integration)之架構,將中介層與微機電熱制動器整合,驗證錫膏回融快速填滿矽穿孔連接器技術的可行性。


    In this paper, we use large cohesion of the solder paste, combine with constrain of cavity and TSV, having the advantage of faster filling TSV. The technology can overcome the current widespread use of plating copper fill TSV issues. This technology can significantly reduce the time of filling TSV. If do not consider the time of the heating and cooling. This process time is only a few seconds. And significantly simplifies the electroplating copper to fill TSV process steps. Use once solder reflow, micro pad, micro bump and TSV can be formed at the same time. And we use cohesion of the solder paste, can improve disadvantage of copper electroplating filling via. In this study not only use of numerical software design parameters, also actual apply this technique to interposer and MEMS actuator. And we use 3D IC Integration type, integrated with interposer and MEMS actuator. To prove the practicability of faster filling TSV interconnects using solder reflow technology.

    第一章 緒論 1 1-1 前言 1 1-2 文獻回顧 3 1-2-1 電鍍銅填滿矽穿孔技術 4 1-2-2 錫合金填滿矽穿孔技術 5 1-3 研究動機 6 1-4 研究目標 7 第二章 設計與分析 18 2-1 表面張力原理 18 2-2 矽穿孔成形機制 19 2-3 設計參數 21 2-3-1 矽穿孔直徑與厚度 21 2-3-2 溝槽深度 22 2-3-3 溝槽邊長 23 2-4 數值分析 24 第三章 矽穿孔成形實驗分析 35 3-1 內聚力實驗 35 3-2 錫膏體積實驗 38 3-3 討論 41 第四章 元件製程與結果 53 4-1 製程流程 53 4-1-1 中介層的製作流程 53 4-1-2 微機電元件的製作流程 54 4-2 製程結果 55 4-2-1 矽中介層的製程結果 55 4-2-2 玻璃中介層的製程結果 55 4-2-3 微機電元件的製程結果 56 4-3 電性量測 56 4-4-1 電流訊號量測 57 4-4-2 熱制動器驅動測試 57 4-4 三維整合實驗 58 4-5 討論 59 第五章 結論與未來工作 69 5-1 結論 69 5-2 未來工作 70 5-2-1 近程目標 70 5-2-2 遠程目標 71 參考文獻 75

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