我們模擬極化激子基於鋁砷化鎵，非對稱量子耦合井在二維垂直靜電場。我們理論呈現發射單光子在工程合理考慮下的陷阱大小與深度。由於樣品獨特特性如位置幾何可以藉由微影精確控制單光子發射器可以在量子通訊下新的應用。

We present the modeling of dipolar excitons in AlGaAs based, asymmetric coupled quantum wells with a vertical electric field induced two-dimensional electrostatic trap. We theoretically show that when the trap size and depth are carefully engineered, it is possible for the system to enter an exciton blockade regime in which single photon emissions can be obtained. Due to the unique properties such as the trap geometry and position can be precisely defined by photolithography, the proposed single photon emitter may find new applications in quantum information processing.

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