本論文實現了一種增強型高分子空間電荷限制電晶體。此元件具有低的次臨界擺幅為96 mV/decade，且在操作電壓1.5伏特下即可具有104的開關電流比。藉由研究元件幾何結構對電晶體特性的影響，我們發現將基極置於通道中間與縮小開口直徑均能使得元件具有低的次臨界擺幅。模擬中央重直通道之電位分佈後，我們瞭解到置放基極於通道中間與縮小孔洞直徑之所以導致低的次臨界擺幅是由於基極具有較佳的調變電位之能力。此外，我們亦探討了高沸點溶劑對空間電荷限制電晶體的影響。

An enhancement-mode polymer space-charge-limited transistor is realized with low subthreshold swing of 96 mV/decade, low operation voltage of 1.5 V, and high on/off current ratio of 104. By investigating the influence of device geometric parameters on transistor characteristics, low subthreshold swing is obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations on the potential distribution at the central vertical channel verify that the base electrode has the best control on the magnitude of potential barrier which results in low subthreshold swing. In addition, the influence of the solvent on the enhancement-mode polymer space-charge-limited transistor is also investigated.

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