本篇論文針對蕭特基二極體以0.35um和0.25um BCD製成設計做討論。我們使用了2D模擬軟體去分析其元件特性，以提升蕭特基二極體的崩潰電壓，及改善導通電阻與漏電流之間的取捨為目標。除了2D模擬軟體提供我們由元件的橫截面上設計蕭特基二體外，3D軟體使我們可以更有彈性的由元件俯視面上做不同光罩的設計。最後，實驗量測結果將可以確認我們的模擬分析是否正確。

In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools to analyze the characteristics of SBD. The two-dimensional simulation helps us to design SBD in the cross-sectional view. In addition, the three-dimensional simulation makes us have further improvement by flexible design in the device top patterns. Finally, the experimental results are given to confirm our analytic work.

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