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研究生: 葉冠毅
Ya, Guan-Yi
論文名稱: 以氯化鋁溶液塗佈於多晶矽背面鈍化太陽能電池背面以形成背部氧化鋁鈍化層之研究
Study of AlOx Passivation Layer Formed by AlCl3 Solution Coated on Rear Surface of Multicrystalline Silicon Solar Cell
指導教授: 王立康
Wang, Li-Karn
口試委員: 甘炯耀
Gan, Jon-Yiew
陳昇暉
Chen, Sheng-Hui
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 光電工程研究所
Institute of Photonics Technologies
論文出版年: 2018
畢業學年度: 107
語文別: 中文
論文頁數: 78
中文關鍵詞: 太陽能電池鈍化層
外文關鍵詞: solar, PERC
相關次數: 點閱:2下載:0
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  • 近年來多晶矽太陽能電池(poly-silicon solar cell )效率的提升已經面臨了瓶頸,所以在提升太陽能電池效率的同時,降低成本也成為市場上的主流之一。同時,PERC(Passivated Emitter and Rear Cell)架構的太陽能電池也是矽晶太陽能電池市場的中流砥柱,所以,本實驗以較低成本的濕式化學沉積氧化鋁薄膜加上PERC架構作為實驗的主體架構。
      本篇主要藉由量測少數載子生命週期數值來探討濕式化學沉積氧化鋁薄膜於背表面的鈍化效果。在少數載子生命週期討論的部分,主要是從多晶矽裸片和沉積氮化矽後的多晶矽兩大類為基底去量測少數載子生命週期,並以不同退火溫度、退火時間以及化學溶液的濃度去量測少數載子生命週期的數值去判斷鈍化效果。其中,雙面塗佈氧化鋁於多晶矽裸片的最佳少數載子生命週期參數為9.79 μs,以及沉積氮化矽後並以濕式化學沉積氧化鋁薄膜於背表面的最佳少數載子生命週期參數為53.32 μs;在實驗過程中發現,氧化鋁薄膜鈍化層在退火結束後,其鈍化效果會隨著時間的增加而衰減,導致少數載子生命週期的下降。
      另一部分則是討論濕式化學沉積氧化鋁鈍化層對背部網狀式電極結構的影響,透過SEM 去觀察背部網狀式電極結構所生成的背電場(BSF, Back Surface Field)厚度檢視其所造成的影響;最後,找出最佳參數,其中最佳數據為效率13.64 %、填充因子F.F.為70 %。


    Recently, polycrystalline silicon solar cells have been stranded at bottlenecks of improving the efficiency. Therefore, while improving the efficiency of solar cells, reducing costs has become one of the mainstream issues in the market. At the same time, solar cells with PERC (Passivated Emitter and Rear Cell) structures uphold an opportunity of efficiency improvement for the cell market. However, it is believed here that current manufacturing processes for PERC cells are still expensive, and the industry may need to have a cheaper method for this type of cell manufacturing.
    To achieve the cost-effectiveness, we focus on the deposition of an important passivation layer for PERC cells. In this thesis, we investigate the passivation effect of wet chemically deposited aluminum oxide film on the back surface by measuring the lifetime of minority carriers. In the first part, we focus on measuring the lifetimes of polycrystalline silicon bare wafers, and the diffused and silicon-nitride deposited polycrystalline silicon wafers at different annealing temperature, annealing time, and concentration of chemical solution. We compare the lifetimes measured for these wafers wet chemically deposited with the chemical solution proposed here. Among them, the best minority carrier lifetime of coated bifacially aluminum oxide layer on polycrystalline silicon wafer is 9.79 μs, and the best minority carrier lifetime for wafers after diffused, silicon-nitride deposited on the front surface, and aluminum oxide film deposited on the back surface is 53.32 μs. In the experiment, it is found that after the annealing of the passivation layer of the aluminum oxide film, the lifetime will decrease slowly with time when exposed in the air, resulting in a decrease in the passivation effect.
    The second part of this thesis is to discuss the effect of the wet chemically deposited aluminum oxide passivation layer on PERC-structured cells, by showing the back electric field (BSF) thickness generated by the rear grid electrode structure through SEM measurement, and the cell’s efficiency. The best cell’s efficiency for our study is 13.64 % with Voc=570.1 mV, Jsc=34.2 mA/cm2, and the F.F. =70 %.

    第一章---------------1 前言---------------1 1.1 ---------------3 1.2 ---------------6 1.3 ---------------10 1.4 ---------------11 第二章---------------12 2.1 ---------------12 2.1-1---------------12 2.1-2---------------17 2.1-3---------------20 2.1-4---------------22 2.2 ---------------24 2.2-1---------------24 2.2-2---------------25 2.3 ---------------27 2.3-1---------------27 2.3-2---------------28 2.4 ---------------31 2.5 ---------------34 2.6 ---------------36 2.7 ---------------37 第三章---------------39 3.1 ---------------39 3.2 ---------------41 3.2-1---------------42 3.2-2---------------44 3.2-3---------------45 3.2-4---------------45 3.2-5---------------46 3.2-6---------------46 3.2-7---------------47 3.2-8---------------47 3.2-9---------------48 第四章---------------49 4.1 ---------------49 4.1-1---------------50 4.1-2---------------56 4-2 ---------------59 4.2-1---------------59 4.2-2---------------60 4.2-3---------------62 4.2-4---------------63 4.2-5---------------66 第五章---------------69 參考文獻---------------71

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