此論文以本實驗室發表於Journal of Lightwave Technology之“Design and Analysis of MOS-capacitor Microring Optical Modulator with SPC Poly-silicon Gate＂[9]文章為基礎，為將金氧半電容式光學微型環狀共振腔電光調變器之設計概念實現，進行金氧半電容式光學微型環狀共振腔製程開發及優化。此元件製作在SOI晶片上，幾何尺寸，脊形高度(rib height) 0.78um、肩膀高度(slab height)0.36um、寬度(rib width)為1um的脊狀波導（rib waveguide） 結構由上到下為：厚度0.568um，P型，濃度是3×1018cm-3的多晶矽（以SPC方式結晶）閘極、厚度為12nm的閘極氧化層和高度0.1um，N型，濃度為3×1017cm-3的單晶矽。製程重點包含微影與蝕刻製程兩大部分：微影部分共10道光罩（含零層），以電子束系統定義最小線寬100nm的光耦合區域、波導佈局，並且致力改善電子束微影製程，優化光阻的線邊粗糙度（Line-edge roughness , LER），提升波導的光學特性。其餘後續製程以I-line光學步進機定義光阻圖案，在環狀共振腔建立主動式電光開關。蝕刻部分著眼於脊狀波導的蝕刻深度及形狀，以及使用化學機械研磨（CMP）系統讓晶片平坦化。

[1]H. Rong, S. Xu, Y.-H. Kuo, V. Sih, O. Cohen, O. Raday, and M. Paniccia, \Low-threshold continuous-wave raman silicon laser," nature photonics, vol. 1, p. 232, 2007.

[2] M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U.Yoon, S. D. D. M. Lennon, F. Gan, F. X. Kaertner, and T. M.Lyszczarz,\CMOS-compatible all-si high-speed waveguide pho-
todiodes with high responsivity in near-infrared communication band," IEEE PHOTONICS TECHNOLOGY, vol. 19, p. 152,2007.

[3] Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, \12.5 gbit/s carrier-injection-based silicon microring silicon modulators," OPTICS EXPRESS, vol. 15, p. 430, 2007.

[4] L. Gu, W. Jiang, X. Chen, L. Wang, and R. T. Chen, \High speed silicon photonic crystal waveguide modulator for low voltage operation," APPLIED PHYSICS LETTERS, vol. 90,pp. 071105{1, 2007.

[5] A. Liu, L. Liao1, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit,
N. Izhaky, and M. Paniccia, \High-speed optical modulation based on carrier depletion in a silicon waveguide," OPTICS EXPRESS, vol. 15, p. 660, 2007.

[6] A. W. Poon, L. Zhou, C. Li, N. K. Hon, and H. Chen, \Microring
and microdisk resonator integrated circuits on a silicon chip,"Procedding of SPIE, vol. 6476, pp. 647607{1, 2007.

[7]A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, \A high-speed silicon optical modulator based on a metal_oxide_semiconductor capacitor," NATURE, vol. 427, p. 615, 2004.

[8] Q. Xu, B. Schmidt, S. Pradhan and M. Lipson, ”Micrometre-scale silicon electro-optic modulator,” Nature, vol. 435, pp. 325-327, May 2005.
[9] Chih T’sung Shih, Zhi Wei Zeng, and Shiuh Chao,“Design and Analysis of MOS-capacitor Microring Optical Modulator with SPC Poly-silicon Gate”,journal of lightwave,to be published.

[10]Hong Xiao, Introduction to Semiconductor Manufacturing Technology,upper Saddle River,New jersey,the Pearson Prentice Hall Inc

[11]S. M. Sze, Semiconductor Devices Physics and Technology, 2nd ed. ,Hoboken New Jersey , wiley&sons , Inc.

[12] James D. Plummer,Michael D.Deal,Peter B. Griffin,Silicon VLSI Technology, upper Saddle River,New jersey Prentice Hall Inc.

[13] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.250-251

[14] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey, the pearson prentice Hall,p327

[15] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey, the pearson prentice Hall,p335

[16] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.317-319

[17] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,p337

[18] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.481-518

[19] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.349-352

[20] A. Mimura, N. Konishi, J. K. Ono, Y. Hosokawa, Y. Ono,T. Suzuki, K. Miyata, and H. Kawakami, \High performance low-temperature poly-si n-channel TFTs for LCD," IEEE Transactions Electron on Devic, vol. 36, p. 351, 1989.

[21] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.354-355
[
22] S. M. Sze, Semiconductor Devices Physics and Technology,2nd ed. ,Hoboken New Jersey , wiley&sons , Inc.,p633..

[23] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.13-15.

[24] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.214.

[25] S. M. Sze, Semiconductor Devices Physics and Technology,2nd ed. ,Hoboken New Jersey , wiley&sons , Inc.,pp627-630.

[26] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,pp.328.

[27]曾育恆，2008，”對閘極非晶矽膜使用雷射退火結晶的電性研究”，國立清華大學，碩士論文。
[28]LINGLIAO,DESMONDR.LIM,ANURADHAM.AGARWAL,XIAOMAN DUAN, KEVIN K. LEE, and LIONEL C. KIMERLING, Optical Transmission Losses in Polycrystalline Silicon Strip Waveguides: Effects of Waveguide Dimensions, Thermal Treatment, Hydrogen Passivation, and Wavelength, Journal of ELECTRONIC MATERIALS, Vol. 29, No. 12, 2000

[29] Hyun-Woo Kim, Ji-Young Lee, Jangho Shin, Sang-Gyun Woo, Han-Ku Cho, and Joo-Tae Moon,\ Experimental Investigation of the Impact of LWR on Sub-100-nm Device Performance, IEEE transactions on electron devices ,vol.51 , no.12 ,december 2004.

[30] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, upper Saddle River,New jersey,the pearson prentice Hall,p354.

[31]謝嘉民，古進譽，”光阻曝光後延遲烘烤對線寬之影響與分析之討論”，奈米通訊，國家微毫米元件實驗室委員會，第六卷第二期。