近年來，隨著能源議題的看重，電力電子和功率元件的發展亦成為關鍵之一，而如何獲得良好的耐壓能力與導通阻值的權衡和如何降低製作成本一直是功率元件的研究發展重點，儘管許多研究發表只需少數光罩即可完成，但仍為特殊製程，需藉由打線接合(Wire bonding)技術將功率元件和主要電路部分連接，因此在成本降低部分仍然受限。
本論文提出一個可整合於互補式金氧半邏輯製程的20伏特等級功率元件，稱為接點閘極金氧半場效電晶體(Contact Gate MOSFET，CGMOS)，因為此元件不需漂移區(Drift region)光罩且不需額外的打線接合技術，故可大幅降低製作成本。藉由T-CAD軟體的模擬以及量測，證實此元件架構的崩潰電壓(Breakdown Voltage，VBD)可達18伏特以上，特徵導通阻值(Specific on-resistance，RON,SP)約為8.8mΩ∙mm2，且由統計分佈，藉由計算元件的特性變化範圍可知其變化誤差為13%以下，而此元件在125˚C下烘烤1000小時後，其特性變化亦在誤差值之內。

In recent years, the improvement of power electronics and power devices is one of keys when the energy issues become more important. The cost down and the tradeoff between breakdown voltage and on-resistance have always been major concerns in designing power devices. Many studies have proposed their structure only needs few masks. However, it is still special process which needs wire bonding to connect the power device and main circuit. It is a limit for cost down.
In this thesis, a novel 20V-class device with CMOS logic compatible process is proposed which called Contact Gate MOSFET (CGMOS). Since the device does not need the mask of drift region and wire bonding, it could be cost down substantially. By T-CAD simulation and measurement, the newly designed device has breakdown voltage up to 18 volt and 8.8mΩ∙mm2 specific on-resistance. From statistical distribution, the stability of device is up to 87%. And no characteristic variation can be observed after long term temperature stress at 125˚C for 1000 hours.

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