本實驗成功的利用Radio Frequency磁控濺鍍法製造出磊晶之Ba0.48Sr0.52TiO3/LaNiO3(BST/LNO)人工超晶格薄膜於單晶鈦酸鍶基板與鎳酸鑭底電極薄膜上。藉由X-ray反射率與X-ray繞射以及SIMS之量測觀察超晶格磊晶薄膜微結構之情形。由 X-ray繞射分析顯示在超晶格磊晶薄膜之中的BST層，由c軸的晶格常數會因為界面處的應變而拉長，並造成介電常數之顯著提升，且由a軸晶格常數變化情形，可得薄膜界面產生的應變大小於超晶格薄膜不同之堆疊厚度之關係，並相對於c軸之變化，得知應變提升則有效將c軸晶格拉長；在超晶格磊晶薄膜系統上，space charge、dipolar 與超晶格磊晶薄膜系統上之影響，可藉由不同頻率變化觀察出，由實驗知space charge對於超晶格磊晶薄膜上之界面層多寡有明顯之影響。此外，比對BTO/LNO人工超晶格磊晶薄膜之文獻其結果是一致，所在於界面之應變能夠有效果提升介電性質，且由於Sr元素之加入可以減少介電損失。藉由X光反射率以及X光繞射的量測可發現幾乎固定的界面粗糙度存在於BST與LNO層之間。因此人工超晶格磊晶薄膜具有相同程度將介電常數提升。

Artificial superlattices having ferroelectric Ba0.48Sr0.52TiO3(BST) and conductive LaNiO3(LNO) as modulation length were grown epitaxially on Nb-doped SrTiO3 (001) substrates and LNO bottom-layer prepared by dual-gun Radio Frequency magnetron sputtering system. The formation of superlattice structure was confirmed from the x-ray reflectivity curves and SIMS depth profiles and (0 0 L) Bragg reflection of x-ray. A partial but nearly constant relaxation of in-plane strain in the superlattices was observed. From a macroscopic point of view, the strain in the superlattice structure contributes significantly to the dielectric enhancement. These BTO/LNO and BST/LNO artificial superlattices show a significant enhancement of dielectric constant relative to BTO and BST single layers of the same effective thickness. X-ray reflectivity measurement reveals that the superlattices have about the same interface roughness of BST/LNO. Consequently, nearly the same extent of dielectric enhancement results from the strained BST layer, along with a highly conductive interface zone in the superlattiecs.

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