研究生: |
林文凱 Lin, Wen-Kai |
---|---|
論文名稱: |
以鈦金屬奈米層輔助氧氣電漿蝕刻製作鑽石奈米柱之研究 Fabrication of diamond nanorods by oxygen plasma etching assisted with a nanoscale titanium metal layer |
指導教授: |
黃振昌
Hwang, J. |
口試委員: |
寇崇善
遲雅各 |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2011 |
畢業學年度: | 99 |
語文別: | 中文 |
論文頁數: | 56 |
中文關鍵詞: | 奈米鑽石 |
相關次數: | 點閱:2 下載:0 |
分享至: |
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利用鈦金屬奈米層輔助氧氣電漿蝕刻製作出鑽石奈米柱,此簡單的方法在本研究已成功發展。研究結果顯示,利用氧氣電漿在100W下,對多晶鑽石膜表面進行蝕刻12 小時,形成的鑽石奈米柱,其平均直徑大約在100-120 nm、長度約為4 um,而經由硫酸(含10 % 過氧化氫)清洗表面的殘餘氧化物,其直徑略縮減了10-20 nm,使其為奈米級柱狀結構。而經由TEM分析證實,鑽石奈米柱為晶向[011]的單晶結構,此有利於奈米元件的製造。最後提出一模型解釋鑽石奈米柱的形成原因,發現由於鑽石膜上的鈦金屬奈米層在蝕刻初期會形成球狀物二氧化鈦氧化物,成為天然的奈米光罩,經長時間的蝕刻後本研究的鑽石奈米柱製作完成。
A simple method has been developed to fabricate diamond nanorods by oxyen plasma etching assisted with a nanoscale titanium metal layer. Vertically oriented diamond nanorods were fabricated for 12 hours on polycrystalline diamond substrate by plasma etching at 100W. The average diameter is about 100-120 nm and average length is about 4 um for diamond nanorods. After cleaning residual oxide on diamond nanorods surface using H2SO4, the average diameter reduce to about 10-20 nm. And they would be nano-scale rods structure. Diamond nanorods are single crystal looking from zone axis [011], confirmed by TEM analysis. A modal is proposed to explain how the diamond nanorods are formed. TiO2 nanoparticles are first formed onto diamond film in etching process, And TiO2 acts as nano masks subsequent for oxygen plasma etching. After etching diamond film for a long time, diamond nanorods were successfully formed.
[1] S. Iijima, Nature 354, 56 (1991).
[2] J. Kong , A. M. Cassell, and H.Dai, Chem. Phys. Lett. 292,567 (1998).
[3] A. Javey, J. Guo, Q.Wang, M. Lundstrom, and H. J. Dai, Nature 424, 654(2003)
[4] S. Frank, S. P. Poncharal, Z. L. Wang, and W. A. deHeer, Science 280,1744(1998)
[5] M. Bockrath, D. H. Cobden, J. Lu, A. G. Rinzler, R.E. Smalley, L. Balents, and P. L. MacEuen, Nature 398, 598(1999)
[6] S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature 393, 49 (1998).
[7] S. M. Bachilo, M. S. Strano, C. Kittrell, R. H. Hauge, R. E. Smalley, and R. B. Weisman, Science 298, 2361 (2002).
[8] R. H. Baughman, A. A. Zakhidov and W. A. de Heer, Science 297, 787 (2002).
[9] L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
[10] A. M. Morales and C. M. Lieber, Science 279, 208(1998).
[11] S. W. Chung, J. Y. Yu, and J. R. Heath, Appl. Phys. Lett. 76, 2068 (2000).
[12] Y. Cui and C. M. Lieber, Science 291, 851 (2001).
[13] Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
[14] J. Goldberger, A. I. Hochbaum, R. Fan, and P. Yang, Nano Lett. 6, 973 (2006).
[15] P. D. Yang, H. Q. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. R. He, and H. J. Choi, Adv. Funct. Mater. 12, 323 (2002).
[16] Y. J. Xing, Z. H. Xi, Z. Q. Xue, X. D. Zhang, J. H. Song, R. M. Wang, J. Xu, Y. Song, S. L. Zhang, and D. P. Yua, Appl. Phys. Lett. 83, 1689 (2003).
[17] Z. Y. Fan and J. G. Lu, Appl. Phys. Lett. 86, 032111 (2005).
[18] Lao CS, Liu J, Gao PX, et al, Nano Lett. 6 , 263-266
(2006).
[19] C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, H. L. Liu, J. J. Wu, K. H. Chen, L. C. Chen, J. Y. Peng, and Y. F. Chen, J. Am. Chem. Soc. 123, 2791 (2001).
[20] J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H. J. Choi, and P. Yang, Nature 422, 599 (2003).
[21] J. R. Kim, H. M. So, J. W. Park, J. J. Kim, J. Kim, C. J. Lee and S. C. Lyu, Appl. Phys. Lett. 80, 3548 (2002).
[22] K. E. Spear, J Am. Cerum. SOC. 72, 171 (1989).
[23] L.S. Pan, D.R. Kania, Diamond: Electronic Properties and Applications, Kluwer Academic Publishers, Boston, 1995.
[24] I. L. Krainsky and V. M. Asnin, Appl. Phys. Lett. 72, 2574 (1998).
[25] R. Kalish, J. Phys. D: Appl. Phys. 40, 6467 (2007).
[26] G. Brezeanu, PROCEEDINGS OF THE ROMANIAN ACADEMY,
Series A 8,000 (2007).
[27] G.S. Gildenblat, S.A. Grot, and A. Badzian, Proc. IEEE 79, 647 (1991).
[28] E. Kohn, M. Kubovic, F. Hernandez-Guillen, and A. Denisenko, 12th GAAS Symposium-Amsterdam, 559 (2004).
[29] E. Kohn, J. Kusterer, and A. Denisenko, IEEE MTT S INTERNATIONAL MICROWAVE SYMPOSIUM 2, 901 (2005)
[30] S. Koizumi, K. Watanabe, M. Hasegawa, and H. Kanda, Science 292, 1899 (2001) .
[31] H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, and H. Kawarada, IEEE Electron Device Lett. 21, 390 (2001).
[32] Y. Gurbuz, O. Esame, I. Tekin, W. P. Kang, and J. L. Davidson, Solid-State Electron. 49, 1055 (2005).
[33] M. W. Geis, J. C. Twichell, J. Macaulay, and K. Okano, Appl. Phys. Lett. 67, 1328 (1995).
[34] H. Shiomi, Jpn. J. Appl. Phys. 36, 7745 (1997).
[35] E. S. Baik, Y. J. Baik, and D. Jeon, Diamond Relat. Mater. 8, 2169 (1999).
[36] E. S. Baik and Y. J. Baik, J. Mater. Res. 15, 923 (2000).
[37] S. Okuyama, S. I. Matsushita, and A. Fujishima, Langmuir 18, 8282 (2002).
[38] W. J. Zhang, Y. Wu, W. K. Wong, X. M. Meng, C. Y. Chan, I. Bello, Y. Lifshitz, and S. T. Lee, Appl. Phys. Lett. 83, 3365 (2003).
[39] Q. Wang, J. J. Li, Y. L. Li, Z. L. Wang, C. Z. Gu, and Z. Cui, J. Phys. Chem. C 111, 7058 (2007).
[40] H. Masuda, T. Yanagishita, K. Yasui, , I. Yagi, T. N. Rao, and A. Fujishima, Adv. Mater. 13, 247 (2001).
[41] T. Yanagishita, K. Nishio, M. Nakao, A. Fujishima, and H. Masuda, Chem. Lett. 10, 976 (2002).
[42] Y.K. Chih, C.H. Chen, J. Hwang, A.P. Lee, and C.S. Kou, Diamond and Related Materials 13, 1614 (2004).
[43] Y. K. Chih, J. Hwang, A. P. Lee, and C. S. Kou, J. Crystal Growth 283, 367 (2005).
[44] M. Y. Chen, K. Y. Wu, J. Hwang, M. T. Chang, L. J. Chou, and C. S. Kou, Nanotechnology 18, 455706 (2007).
[45] T. Tachibana, B. E. Williams, and J. T. Glass, Phys. Rev. B45, 11975-11981(1992).
[46] K. L. Moazed, J. R. Zeidler, M. J. Taylor, J. Appl. Phys. 68, No.5,1(1990).
[47] K. L. Moazed, Richard Nguyen, and James R. Zeidler, IEEE Electron Device Letter 9, No I(1998).
[48] M. D. Bell and W. J. Leivo, Phys. Rev. 111, 1227(1958).
[49] G. H. Glover, Solid-State Electron 16, 973(1973).
[50] G. Sh. Gildenblat, S. A. Grot, C. R. Wronski, A. R. Badzian, and T. Bad T. Badzian, Appl. Phys. Lett. 53, 586(1988).
[51] J.Y. Lin, W. K. Lin, J. Y. Gan, J. C. Hwang and C. S. Kou, Nanotechnology 22, 205707(2011).
[52] 李正中,薄膜光學鍍膜技術,藝軒圖書出版社(2009)。
[53] 國科會精密儀器發展中心,真空技術與應用,全華科技(2004)
[54] Jon Orloff, Lynwood W. Swanson, and M. Utlaut.High, Resolution Focused Ion Beam: FIB and Its Applications, KA/PP.
[55] 汪建民, 材料分析,中國材料科學學會:(2005)。
[56] Hans Jorg Mathieu, “Surface Analysis-the principle techniques”, 99(1999).
[57] Jon Orloff, Lynwood W. Swanson, and M. Utlaut.High, Resolution Focused Ion Beam: FIB and Its Applications, KA/PP.
[58] 郭正次,朝春光,奈米結構材料科學,全華:(2004)。