在本次實驗中我們成功製作了金屬(Al)/鐵電薄膜(PZT)/絕緣層(ZrO2)/半導體(p-type)電容器及廠效應電晶體。利用了dilute HCl 的表面處理方法去頓化ZrO2/Si 的表面並降低漏電流。本實驗中，我們使用射頻磁控濺鍍法沈積(氧化鋯)ZrO2薄膜，並於沈積前後分別利用H2O2及dilute HCl進行表面處理，之後將其製成金屬(Al)/鐵電薄膜(PZT)/絕緣層(ZrO2)/半導體(p-type)電容器及廠效應電晶體。
在電容量測方面,我們發現在經過前後處理過的電容,其漏電流在5V時可以降地到5.4x10-6 A/cm2 。而在電容的記憶保持力方面,經過前後處理過的電容,其記憶保持力可以從13.3小時進步到17.1天。而電容在8V時其記憶窗可以到達最大0.7V。
在場效應電晶體方面,其閘極漏電流在5V可以降低至5X10-6 A/cm2。而電晶體的電子遷移率可以到達267 cm2/V-s。而電晶體的次臨界斜率可以改善到106 mV/dec。而在電晶體記憶保持力方面,我們發現在3000秒後臨界電壓的記憶窗可以達到1.1V,顯示出記憶保持力有很大的改善,推測原因是因為閘極漏電流的降低。

Abstract
Al/ Pb (Zr0.53, Ti0.47) O3 (PZT) /ZrO2/Si metal-ferroelectric-insulator semiconductor (MFIS) capacitors and transistors were fabricated. A surface treatment method was used to passivate ZrO2/Si interface and to reduce the leakage current. The wafers were given a H2O2 pre-treatment before ZrO2 deposition and a HCl treatment after deposition.
The leakage current density of Al/PZT/ZrO2/Si capacitors was improved to 5.4x10-6 A/cm2 at a sweep voltage of 5 V. The retention time of Al/PZT/ZrO2/Si capacitors after these surface treatments was increased from 13.3 hours to 17.1 days. The largest memory window of 0.7 V was obtained at a sweep voltage of 8 V.
The gate leakage current density of FeFETs at 5 V was reduced to 5x10-6 A/cm2. The electron mobility is 267 cm2/V-s. The subthreshold slope was improved to 106 mV/dec. The FeFETs maintain a threshold voltage window of about 1.1 V after an elapsed time of 3000 sec. The improved retention time is attributed to the reduced gate leakage current.

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