本論文主要研究多晶陶瓷材料於束縛燒結時的緻密行為與顯微結構發展，並探討於束縛燒結時其緻密行為延緩的原因，以及分析其積層陶瓷電容之失效機制。首先在第一章中簡介低溫共燒陶瓷製程技術與材料選擇，以及積層共燒材料間的匹配度問題，束縛燒結技術與其所面臨的問題。近年來新興的無玻璃陶瓷具本質低溫燒結特性，因不需添加助燒結劑且於燒結後即為單一純相，此可降低燒結體與電極材料間交互作用的可能性，有利於元件後續製程，將更適合低溫共燒陶瓷的應用，因此本研究選用無玻璃陶瓷Bi2(Zn1/3Nb2/3)2O7 (BZN)為研究對象，採用無應力協助之束縛燒結(Pressureless-assisted sintering, PLAS)技術，以氧化鋁生胚層作為束縛層，在第二章中探討BZN於束縛燒結時的緻密行為與顯微結構發展，以及造成多晶材料於束縛燒結下緻密行為延遲的原因(包含平面張應力、燒結機制、異向性等)。在850oC持溫兩小時BZN於自由燒結下可達緻密(相對燒結密度達95%)，在相同的燒結條件下BZN於束縛燒結時僅只有相對燒結密度78.7%，延長燒結時間至五小時，對於燒結密度的提升有限(83.3%)，但將燒結溫度提高至900oC持溫兩小時，束縛燒結下的BZN可達緻密化。BZN於束縛燒結下無顯著異向性顯微結構發展且具有與自由燒結時相似的晶粒尺寸，因此可利用等向性構成方程式分析BZN於束縛燒結時的緻密行為與應力變化。
在材料於自由燒結可緻密化的燒結條件(溫度與時間)下，於PLAS時材料的緻密行為發生延緩，具有較低的緻密度與較慢的緻密速率，為了解決此問題，於PLAS技術中輔以外加單軸向壓應力的方式來達到緻密化的需求，因此在第三章中探討外加應力對BZN於PLAS時的影響，包含緻密行為與顯微結構，BZN於束縛燒結下之緻密度隨外加應力增加而增加，達緻密化的時間隨應力增加而縮短，顯微結構不因外加應力而有特殊發展趨勢，接著利用構成方程式推導之理論公式，計算使BZN於PLAS時具有與自由燒結時相同之緻密速率所需施加的單軸向壓應力為50-600 kPa，與實驗量測結果相符，表示材料於束縛燒結時的多孔體黏度之量測正確性以及構成方程式的適用性。在第三章最後總結BZN與各多晶材料系統於束縛燒結時之緻密行為與顯微結構等性質的相關性，以束縛和自由燒結溫度之比值，表示多晶材料於束縛燒結時緻密行為的延遲程度與顯微結構的異向性程度，以及燒結機制改變的可能性。
在第四章中探討以BZN為介電層，選擇不需氣氛控制且高導電率的銀為內電極材料所組成之積層陶瓷電容(Multilayer ceramic capacitance, MLCC)於高溫和高壓時的失效機制，以及BZN與銀之間的化學穩定性。內電極材料銀與BZN之間無化學反應，兩者共燒後可得具良好緻密度且無脫層等缺陷的積層陶瓷電容。由加速生命試驗的結果表示元件失效時間隨溫度或電壓的增加而縮短。分析失效前後元件的銀濃度變化，顯示在高電場下使內電極銀發生遷移。由阻抗頻譜量測，驗證MLCC-BZN絕緣電阻的下降來自共燒時銀離子擴散與氧空缺的生成，而加速介電崩潰的發生。失效後元件外部產生破裂，內部則有孔洞與裂縫並有銀顆粒的填充，表示元件的失效機制主要為熱崩潰主導。

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