利用碳材料 (奈米碳管) 做為通道，研究電子自旋傳輸始於 1999 年，多數的研究以鈷鎳或鎳鐵合金等磁性金屬做為電極，注入極化電子。本論文則利用有機半導體碳60 (C60) 做為自旋電子之傳輸通道並與單自旋金屬 (CrO2) 電極結合，這是前所未見的實驗。首章初談碳材料與單自旋金屬的特性，往後的章節將依序介紹自旋電子學，實驗的製成步驟，以及元件的量測等內容。
西元1957年，諾貝爾物理獎頒給電晶體發明者，Shockley、Bardeen、 Barttain，同時也宣告電晶體時代的來臨，比起真空管，電晶體擁有更多的優點，如體積小、損耗功率低、以及更高速的運作等優點。然而一般的電晶體都是利用閘極來控制電子是否通過源汲與汲極間的通道，在此和以往不同，我們將利用電子自旋的特性來製成自旋電子元件，由電子自旋方向來決定，電子是否通過富勒烯 C60 所製成的通道，並藉由自旋之方向重新定義元件的開關。
在第一章中，我們介紹碳材料與 C60 的基本物理特性，包括晶格結構，電子能帶結構，電特性，以及磁學中的基本物理觀念，此本章節裡也將詳盡介紹在奈米電子元件中的量子傳輸之特性。第二章將論述電子自旋傳輸之基本物理現象，包含磁阻、自旋散射、自旋注入，以及自旋傳輸與偵測，而以往利用磁性物質將自旋電子注入至半導體中，最大的困難就是鐵磁性物質與半導體間的導值不匹配的問題，我們將利用單自旋金屬 (half-metal) ， Chromium dioxide (CrO2) ，來解決這個問題，CrO2 是一新穎的單自旋金屬材料，其擁有接近 100\% 的電子自旋極化率。這裡我們將探討在自旋注入中所面臨的阻礙與自旋偵測時在局部性 (local) 以及非局部性 (non-local) 測量上的差異。在第三章中，我們將詳盡描述自旋電子元件的製作方法，首先利用化學氣相沉積法成長 CrO2 薄膜，並利用選擇性成長技術，成功的將 CrO2 薄膜圖紋化，過程中主要是利用電子束微影技術，爾後蒸鍍鋁金屬，先完成圖紋化結構，最後在沉積 CrO2 薄膜於基板上，在有鋁金屬的地方 CrO2 將不會成長於上方，進而得到選擇性成長的半自旋金屬之薄膜，利用此優點可以將兩電極之距離縮短至 200-300\,nm 以內，使得更有利於自旋傳輸之量測，最後進入到低溫系統進行量測。第四章將論述我們實驗室自己成長的單自旋金屬-CrO2 ，探討利用電子顯微鏡 (SEM) 與 X-ray 繞射、SQUID 磁性分析、以及常溫至低溫的電性傳輸特性之分析結果，以及第五章的結果討論。

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