我們在這篇論文中研究Fano共振與Kondo效應在側接量子點中的干涉行為。側接量子點系統是由兩顆量子點組成，其中只有一顆量子點與導電電子接線耦合，而另一顆藉由反鐵磁自旋作用力與第一顆量子點作用。 我們利用微擾重整化群與數值重整化群來研究反鐵磁作用力對在導線上Fano共振的影響。 系統中的反鐵磁作用力與Kondo效應產生競爭，使系統產生自旋單態的基態，又稱為”二次Kondo遮蔽”。 我們發現在有反鐵磁作用力的情況下，Fano共振圖形產生了一個雙峰谷的結構，第一個是出現在Kondo溫度，另一個出現在更小的能量，證明了與二次Kondo遮蔽的關係。 在電子電洞對稱的情況下，Fano共振圖形在低能量的區間會有普適標度的行為； 在電子電洞不對稱的情況下,普適標度的行為會轉變為過渡行為。 我們發現微擾重整化群可以定性得解釋數值重整化群的結果。 在這篇論文中我們也討論了理論結果與實驗上的關係。

維擾重整化群 Perturbative renormalization group
數值重整化群 Numerical renormalization group
自旋單態 Spin singlet
電子電洞對稱 Particle hole symmetry
譜適標度 Universal scaling
過渡 Crossover

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