以覆晶封裝之960 X 540 氮化鎵微型發光二極體陣列

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研究生：	施延霖 Shih,Yen-Lin
論文名稱：	以覆晶封裝之960 X 540 氮化鎵微型發光二極體陣列 Flip-Chip Bonding for 960 X 540 GaN-Based Micro Light Emitting Diode Array
指導教授：	吳孟奇 Wu,Meng Chyi 何充隆 Ho,Chong Long
口試委員:	黃麒甄盧峙丞
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2016
畢業學年度：	104
語文別：	英文
論文頁數：	68
中文關鍵詞：	覆晶封裝、微型發光二極體
外文關鍵詞：	Flip Chip Bonding, Micro LED
相關次數：	點閱：4 下載：0
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近年來，覆晶封裝已逐漸成為封裝產業上重要的一項技術，比起傳統打線封裝技術，其高I/O、縮小體積及其較短電流傳遞路徑，加上其散熱效果好，其與光電元件結合的潛能得使得許多元件的封裝都尋求應用此項技術。本研究以開發圖像顯示的微型發光二極體(mLED)陣列應用覆晶封裝的技術為目的，其重點在於找出封裝的最佳條件，並尋求製程的精進使得每個像素都能出光，提升畫素之良率並有良好的均勻度。最終完成一覆晶型960  540微型發光二極體陣列，其良率為46.42%。
由於藍寶石基板的低熱傳導及絕緣特性，使得微型發光二極體陣列可應用於多項用途，因應未來主流應用於大陣列尺寸且產能需求，本研究以銦作為接合材料，建立6 um高度之銦凸塊蒸鍍技術，輔以串聯迴路之菊輪狀結構(Daisy Chain)測試其電性，找出適當接合之條件及後續之底填(Underfill)程序，測試出在100°C 30s 60N會有最小單點電阻0.0597 Ω，並應用於覆晶型微型發光二極體陣列，以此研究為根基，未來應用於穿戴式裝置及無光罩微影，推廣並拓展LED應用面及增加其產值。

Recently, Flip-chip bonding plays an important role in bonding industries. Rather than traditional wire bonding, flip-chip bonding have many merits including high I/O, smaller size, shorter electrical path and better heat dissipation. Thus, many optoelectronics devices are asked for combination with this technique. The purpose of this research is to develop micro light emitting diode array applying flip-chip technique and aim for finding out the best parameter for flip-chip bonding. Besides, it is hoped to let all pixels lightened, increase yield and achieve well uniformity as process enhanced. At last, the 960  540 mLEDA by flip chip bonding is fabricated with yield rate 46.42%.
Because of insulating and hardness of sapphire, micro LED array has many potential in many fields. In response to larger size array and capacity requirements in the future, we use indium as interconnection material which is 6 um high by e-beam evaporation in this thesis. Daisy chain used for evaluating the inter-chip connectivity is also brought to our experiment. After finding out optimal bonding parameter and method for injection of underfill, the smallest single bump resistance in 10um diameter of daisy chain is 0.0597 Ω. Finally, apply the bonding parameter in 960  540 mLEDA.
We hope that this research would be dedicated to development of wearable devices and mask-free photolithography in the future and expanding potential applications of LED.

中文摘要...........................................................Ι
ABSTRACT........................................................П
誌謝...............................................................Ⅲ
CONTENTS..................................................IV
LIST OF FIGURES..................................................VI
LIST OF TABLES...................................................X
Chapter 1. Introduction...............................................1
1-1    Flip chip technology............................................1
1-2    Development of Ш-nitride based light emitting diodes.................2
1-3    Motivation and objective........................................5
Chapter 2. Backgrounds...............................................6
2-1 Bonding overview..............................................6
2-2 Wire bonding..................................................6
2-3 Flip chip bonding..............................................8
2-4 Under Bump Metallization (UBM) for flip chip bonding...............12
2-5 Bump formation..............................................14
2-6 Indium overview..............................................16
2-7 Theory of light emitting diodes...................................17
 2-8 Optical properties of light emitting diodes...........................20
    2-9 Theory of current spreading layer..................................22
    2-10 Characterization instruments.....................................24
    2-10-1 Current-Voltage (I-V) characteristic measuring system...........24
            2-10-2 Electroluminescence (EL) measuring system...................25
            2-10-3 Light output power-current (L-I) measurement.................26
Chapter 3.Indium investigation and fabrications..........................28
    3-1 Experimental process of daisy chain structure.........................28
    3-2 Experimental process of test submount for 960  540 mLEDA............36
    3-3 Experimental process of 960  540 mLEDA..........................41
Chapter 4. Flip-chip bonding results and discussions.......................42
    4-1 Daisy chain measurement and analysis..............................42
    4-2 Characteristics of flip-chip bonded 960  540 mLEDA .................54
        4-2-1 I-V characteristics analysis of blue mLEDA......................55
        4-2-2 Electroluminescence (EL) spectrum of blue mLEDA..............62
        4-2-3 Yield rate for blue mLEDA...................................63
Chapter 5. Conclusions...............................................65
References.........................................................66

                                

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