奈米尺度下材料的物理和化學特性與巨觀特性明顯不同，如何清楚的觀察到奈米結構的物性和化性，一直是科學家研究的目標。在這篇論文中，我們主要專注在掃描穿隧顯微鏡(Scanning Tunneling Microscope，縮寫為STM)探針的處理和對樣品表面解析度的影響。利用掃描穿隧顯微鏡去掃描經過碳化的Si(111)-7x7表面，在這個表面上形成奈米尺度的碳化矽(SiC)顆粒，顆粒高度約2.5 nm到3 nm，寬度不一。當圖解析度不好時，一般在平坦表面是使用高壓脈衝處理，但在高低不平表面效果不佳，所以使用不同的探針電壓和掃描速度進行操作，可利用SiC顆粒的尺寸變化和圖像變化來判斷探針尖端的變化，我們將此方法稱為高速高壓修針。通過對實驗結果的統計並結合尖銳化處理理論，我們發現了在奈米尺寸SiC顆粒在的Si(111)-7x7表面上探針尖銳化的最佳條件。

The physical and chemical properties of materials at the nanometer scale are significantly different from the macroscopic properties. How to clearly observe the physical and chemical properties of nanostructures has always been the goal of scientists. In this paper, we mainly focus on the processing of Scanning Tunneling Microscopy (STM) tip and the effect on surface resolution. STM is used to scan Si(111) surface which is partially carbonized. This surface consists of nanometer-size SiC particles. The height of the surface particles is about 2.5 nm to 3 nm with varying width. When the image resolution is not good, high-voltage pulse tip treatment is used on flat surfaces, and the effect is not good on uneven surfaces. By operating different tip voltages and scanning speeds, the size change of SiC particles and change of image are used to judge the change of the tip. We call this method high-speed and high-voltage tip treatment. From the statistics of the results and combination with the theory of tip treatment, we find out the best conditions for the sharpening of tip on the Si(111)-7x7 surface embedded with nanometer-size SiC particles.

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