研究生: |
林家賢 Jia Shian Lin |
---|---|
論文名稱: |
CMOS微加工之感測電極陣列 CMOS-micromachined, Two-dimenisional Transistor Arrays for Neural Recording |
指導教授: |
陳新
Hsin Chen |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
論文出版年: | 2007 |
畢業學年度: | 95 |
語文別: | 英文 |
論文頁數: | 78 |
中文關鍵詞: | 膜外神經感測 、多級陣列 、感測電路 、CMOS-MEMS |
外文關鍵詞: | Extracellular Neural Recording, Multielectrode Array, Readout circuitry, CMOS-MEMS |
相關次數: | 點閱:4 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
近年來,神經科學(Neuroscience)逐漸成為科學界眾人矚目的焦點並成為這個世紀極有潛力的一門學科。神經學的發展中一個很重要的主題為對於神經信號的判讀與處理,這對於設計諸如人工眼、機械手臂等仿生義肢(Prosthetics)的技術是很重要的基礎。在記載神經信號的技術上,一個尚待突破的瓶頸為細胞膜外量測(Extracellular Recording)的精密度。由於種種的關係,膜外量測的精準度始終無法與傳統膜內量測(Intracellular Recording)並駕齊驅,而這也成為爾等投身神經工程的人員們,努力的目標。
多重電極陣列(Multi-Electrodes Array)主要被應用於膜外 感測一群神經元(neuron)的電生理活動,它的優點在於使用非侵入式(noninvasive)的方法,可對細胞做長時間觀測,並可同時記錄大批樣本。在此篇論文中,我們企圖設計一種可整合刺激(stimulation)與紀錄(recording)的傳感器(transducer)。因為相容於標準CMOS製程(CMOS compatible),後端感測電路可置於結構底下,可以避免多餘的雜訊干擾;並利用微加工(micromachining)的技術,製造出一個穴型的結構,嘗試在細胞與傳感器之間,形成密封度更加的介面。系統中感測器的結構採用多指金氧半場效電晶體(multi-fingered MOSFET)為基礎,具備可調整的轉導值(transconductance),並可設計成二維的陣列(2-D array)。論文中將會討論比較過去的文獻,詳述設計的原理和流程,並展示模擬、製程與量測的結果
Recently, neuroscience is becoming a potential subject and held a lots attraction. The development of neuroscience not only promotes the progress of the medicine and pharmacology, but, the most important, the understanding of human being. The techniques of neural recording can be divided into two parts: intracellular recording and extracellular recording. For the noninvasive extracellular recording, long term measurement is available but the precision is still inferior to intracellular recording.
Multi-Electrode array (MEA) is usually involved in a modern extracellular recording system as a fundamental tool. It has the ability to record large amount of samples and the synchronized activities. In this thesis, we develop a CMOS compatible transducer design with the ability of integrating stimulation and recording. The 2D sensor arrays are based on OSFET, which is a MOSFET without polygate, leading direct contact between gate oxide and electrolyte. Taking the advantage of micromachining technique, a hole structure is built above the sensor for a more intimate interface. The back-end readout circuit, with a tunable gain, is just implemented under the structure for avoiding additional disturbance from bonding.
The chip is fabricated in a standard CMOS process with several post-CMOS process steps and package to form microstructure and ensure its stability in physiological saline. The readout circuit is comprised of a current amplifier and an I-V converter and associated with each sensor. A multiplexer is utilized for choosing the working unit.
[1] W. Liu, K. Vichienchom, M. Clements, and et al., “A neuro-stimulus chip with telemetry
unit for retinal prosthetic device,” IEEE JOURNALOF SOLID-STATE CIRCUITS, vol. 35,
no. 10, pp. 1487 – 1497, 2000.
[2] P. Bergveld, J. Wiersma, and H. Meertens, “Extracellular potential recordings by means
of a field effect transistor without gate metal, called osfet,” IEEE Trans. Biomedical Eng.,
vol. 23, no. 2, pp. 136 – 144, 1976.
[3] B. Yeh, Introduction to brain function. Lecture material, NTHU, 2005.
[4] A. Grinvald, W. Ross, and I. Farber, “Simutalneous optical measurement of electricalactivity
from multiple sites on processes of cultured neurons,” PROCEEDINGS OF
THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICABIOLOGICAL
SCIENCES, vol. 78, no. 5, pp. 3245 – 3249, 1981.
[5] M. Jenkner and et. al., “Cell-based cmos sensor and actuator arrays,” IEEE Journal of
Solid-State Circuits, vol. 39, no. 12, pp. 2431 – 2436, 2004.
[6] F. Patolsky and et. al., “Detectioin, stimulation, and inhibition of neuronal signals with
high density nanowire transistor arrays,” Science, vol. 313, pp. 1100 – 1104, 2006.
[7] P. Fromherz and et al., “Membrane transistor with giant lipid vesicle touching a silicon
chip,” APPLIED PHYSICS A-MATERIALS SCIENCE and PROCESSING, vol. 69, no. 5,
pp. 571 – 576, 1999.
[8] K. Wise and et. al., “Wireless implantable microsystems: High-density electronic interfaces
to the nervous system,” Proceedings of the IEEE, vol. 92, no. 1, pp. 76–97, 2004.
[9] M. Ho and et. al., “Cmos micromachined probes by die-level fabrication for extracellular
neural recording,” Journal of MicroMech.and MicroEng., vol. 17, pp. 283–290, 2006.
[10] B. Eversmann and et. al., “A 128x128 cmos biosensor array for extracellular recording of
neural activity,” IEEE Journal of Solid-State Circuits, vol. 38, no. 12, pp. 2306 – 2317,
2003.
[11] F. Heer and et. al., “Cmos microelectrode array for bidirectional interaction with neuronal
networks,” IEEE Journal of Solid-State Circuits, vol. 41, no. 7, pp. 1620–1629, 2006.
[12] M. Voelker and P. Fromherz, “Signal transmission from individual mammalian nerve cell
to filed-effect transistor,” SMALL, vol. 1, no. 2, pp. 206 – 210, 2005.
[13] P. Fromherz, A. Offenhausser, and et.al., “A neuron-silicon junction: A retzius cell of the
leech on an insulated-gate field-effect transistor,” SCIENCE, vol. 252, no. 5010, pp. 1290
– 1293, 1990.
[14] M. Merz and P. Fromherz, “Silicon chip interfaced with a geometrically defined net of
snail neurons,” Advanced Functional Materials, vol. 5, pp. 739 – 743, 2005.
76
[15] M. Maher, J. Pine, J. Wright, and et al., “The neurochip: a new multielectrode device
for stimulating and recording from cultured neurons,” JOURNAL OF NEUROSCIENCE
METHODS, vol. 87, pp. 45 – 56, 1999.
[16] R. Weis and P. Fromherz, “Frequency dependent signal transfer in neuron transistors,”
PHYSICAL REVIEW E, vol. 55, no. 1, pp. 877 – 889, 1997.
[17] P. Fromherz, “Extracellular recording with transistors and the distribution of ionic conductances
in a cel membrain,” EUROPEAN BIOPHYSICS JOURNAL WITH BIOPHYSICS
LETTERS, vol. 28, pp. 254 – 258, 1999.
[18] P. Fromherz, O. Carsten, and R. Weis, “Neuron transistor: Electrical transfer function
measured by the patch-clamp technique,” Physical Review Letters, vol. 71, no. 24, pp.
4079–4082, 1993.
[19] G. Kovacs, “Electronic sensors with living cellular components,” PROCEEDINGS OF
THE IEEE, vol. 91, no. 6, pp. 915 – 929, 2003.
[20] M. Voelker and P. Fromherz, “Nyquist noise of cell adhesion detected in a neuron-silicon
transistor,” PHYSICAL REVIEW LETTERS, vol. 96, no. 22, 2006.
[21] V. Kieessling and et. al, “Extracellular resistance in cell adhesion measured with a transistor
probe,” LANGMUIR, vol. 16, no. 7, pp. 3517 – 3521, 2000.
[22] C. Sprossler and et. al., “Long-term recordings system based on field-effect transistor
arrays for monitoring electrogenic cells in culture,” Biosensor and Bioelectronics, vol. 13,
pp. 613 – 618, 1998.
[23] D. Borkholder, “Cell-based biosensors using microelectrodes,” vol. Ph.D. dissertation,
Standford Univ., CA, 2002.
[24] R. Harrison and C. Charles, “A low-power low-noise cmos amplifier for neural recording
appications,” IEEE J. Solid-State Circuits, vol. 38, no. 6, pp. 958 – 965, 2003.
[25] A. Lambacher and et al., “Electrical imaging of neuronal activity by multi-transistor-array
(mta) recording at 7.8um resolution,” APPLIED PHYSICS A-MATERIALS SCIENCE and
PROCESSING, vol. 79, pp. 1607 – 1611, 2004.
[26] P. Fromherz and A. Stett, “Silicon-neuron junctioncapacitive stimulation of an individual
neuron on a silicon chip,” Phys. Rev. Lett., vol. 75, pp. 1670–1673, 1995.
[27] Y. Nemirovsky, I. Brouk, and C. Jakobson, “1/f noise in cmos transistors for analog applications,”
IEEE Trans. Electron Device., vol. 48, no. 5, pp. 921 – 927, 2001.
[28] K. Williams and R. Muller, “Etch rates for micromachining processing,” J. Microelectromechanical
systems, vol. 5, no. 4, pp. 256 – 269, 1986.
[29] Y. T. M. Banu, “Floating voltage-controlled resistors in cmos technology,” ELECTRONICS
LETTERS, vol. 18, no. 15, pp. 678 – 679, 1982.
[30] P. Gray, P. Hurst, S. Lewis, and R. Meyer, Analysis and Design of Analog Integrated
Circuits, 4th ed. John Wiley and Sons, 2001.
77
[31] TSMC, Datasheet of 0.35UM 2P4M process. TSMC, 2006.
[32] J. Plummer, M. Deal, and P. Griffin, Silicon VLSI Technology. Prentice Hall, 2000.