疏水性奈米鈀用作無電鍍銅催化劑及其作為薄膜電晶體顯示器閘極陣列之研究

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研究生：	游輝日 Hui Jih Yu
論文名稱：	疏水性奈米鈀用作無電鍍銅催化劑及其作為薄膜電晶體顯示器閘極陣列之研究 A Study of Hydrophobic Pd Nanoparticles as Activator for Electroless Copper Plating and its Application as Gate Electrode of α-Si TFT-LCD
指導教授：	萬其超 Chi-Chao Wan 王詠雲 Yung-Yun Wang
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程學系 Department of Chemical Engineering
論文出版年：	2006
畢業學年度：	94
語文別：	英文
論文頁數：	67
中文關鍵詞：	疏水性奈米鈀粒子、無電電鍍、化學鍍、液晶顯示器
外文關鍵詞：	Hydrophobic Pd nanoparticles, electroless plating, TFT-LCD
相關次數：	點閱：4 下載：0
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大尺寸高解析度之TFT液晶顯示器(TFT-LCD)是近幾年各界熱門的發展方向。而因銅具有低電阻值能有效降低RC-delay效應，因此比鋁更適合成為閘極導線材料，也符合液晶顯示器在未來的發展趨勢。另外，往大尺寸方向發展另一問題，便是建置設備設本勢必更加難以想像，因此具有低成本潛力的無電鍍沉積方式便是值得研究的方向。
將銅應用在閘極導線最需克服的問題便是銅與玻璃基材之間的附著性。本論文之重點便是將疏水性奈米鈀粒子用作為無電鍍沉積之催化劑，並期待能發展出不外加附著層(adhesion layer)的方式來沉積金屬薄膜並最終形成閘極金屬導線。
於論文中除了應用疏水性奈米鈀粒子作為催化劑，更以商用之催化劑-鍚鈀膠體作為比較對象。是以AA、SEM、四點探針等檢驗由無電鍍方式所沉積之銅膜。
然而在玻璃基材上所沉積之銅膜有嚴重之不連續性的問題，因此具ITO薄膜之玻璃基材在文末便成為改善銅膜形成之替換基材。
在ITO基材上所沉積之銅膜不僅具有優良之連續性與光面性。因退火而造成電阻值下降的因素可簡分為溫度與時間，若在300℃退火四個小時候，則電阻值可降低為~3μΩcm。

Thin Film Transistor- Liquid Crystal Display (TFT-LCD) has been extensively used. Because copper has lower resistivity than aluminum, it is considered an appropriate material for gate TFT-LCD for next generation.
One potential technology for this transition is electroless copper plating. Chief performance concern would be the adhesion of copper deposit to the substrate surface. In this study, we attempt to use a new activator, hydrophobic Pd nanoparticles which was developed in our laboratory to improve this technology.
In this study, we firmly applied nano-Pdhy in deposition onto glass substrates and compared it with traditional Pd/Sn colloids. Characterization and morphology of Cu film were studied by AA, SEM, XRD and four-point probe.
Since Cu film deposited on glass substrates shows serious discontinuation and poor adhesion, ITO substrates were later employed.
Cu film deposited on an adequately rough ITO substrates shows good coverage, smoothness and low electrical resistance,~3μΩcm , after annealing at 300℃for 4hr.

Abstract     Ⅰ
Table of Contents     Ⅱ
List of Figures     Ⅴ
List of Table     Ⅷ

Table of contents
Chapter 1  Introduction     1
1-1    Introduction of TFT-LCD    1
1-2    Background of Thin Film Transistor    4

Chapter 2    Literatures review     7
2-1    Copper as interconnection metal    7
2.1-1 Candidate metal for interconnection…………………………………7
2.1-2 Improvements in Al and Ag………………………………………….9
2-2    Issues with copper as gate metal    10
2-3    Electroless copper plating used in AM-LCD’s    12
2-4    Activation Solution    15
2-5    Hydrophobic Pd-based nanoparticles (nano-Pdhy)    17
2-6    Motivation and Research Purpose    21

Chapter 3    Research Method    22
3-1 Materials    22
3-2 Characterization Instruments    23
3-2-1 Atomic Absorbance Spectroscopy    23
3-2-2 Scanning Electron Microscope (SEM)    26
3-2-3 Atomic Force Microscopy………………………………………….27
3-2-4 X-ray Diffraction………………………….………………………..28
3-3 Experiments    31
    3-3-1 Syntheses and characterization of hydrophobic Pd nanoparticles….31
    3-3-2 Application of Pd/Sn colloids on glass substrate…………………...32
        3-3-2-1 Standard electroless copper plating process………………...32
        3-3-2-2 Amounts of Pd/Sn absorption onto substrates………………33
    3-3-3 Process of nano-Pdhy application on glass substrate Determination..33
        3-3-3-1 Nano-Pdhy solution applied on glass substrate……………....33
        3-3-3-2 Acceleration with methanol………………………………....34
        3-3-3-3Heating activated substrates at high temperature and vacuum34
        3-3-3-4Improved process for applying nano-Pdhy onto glass substrate………………………………...……………………34
3-4 Insert ITO layer to improve Cu film and adhesion    36
3-5 Morphology and Characterization of Cu film…………........……………...37
    3-5-1 Copper film analysis     37
    3-5-2 X-ray deflection    37
    3-5-3 Resistivity measurement    37
    3-5-4 Annealing    37
    3-5-5 3M tape test    37
Chapter 4     Result and Discussion    38
4-1 Adsorption of hydrophobic Pd nanoparticles to glass substrate    38
4-2 Acceleration by methanol immersion    42
4-3 Optimization of activation procedures    43
4-4 Morphology of copper film deposition on glass substrates and characterization    47
4-5 Electroless Cu deposition on ITO substrates……………………………….52
4-6 Characterization of copper film deposition on ITO substrates……………..60
Chapter 5 Conclusion and Future Work    62
Chapter 6 Reference    64

                                

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