電漿技術在半導體業與顯示面板製造業中使用已相當普及，而平面式電感耦合電漿源所能產生的大面積的電漿源可適用於不斷scale-up的晶圓與玻璃基板，而在製程平面上也比螺旋式電感耦合電漿源的電漿均勻性更佳。本研究主要利用平面式的感應線圈，由感應線圈約60cm*30cm的面積下，能產生均勻的大面積電漿；實驗主要試驗氣體為Ar，在不同的Power與氣壓條件下，以Langmuir probe量測電漿產生區內電漿的基本特性與電漿分布均勻性。此外，實驗將感應線圈置放於真空腔體內部（內置式ICP）產生電漿與置放真空腔體外部（外置式ICP）透過石英介電窗產生電漿，比較以這兩種方式產生電漿的優劣情形。

[1] J.H. Keller,Plasma Source Sci. Technol. 5 p166 1996
[2] J Hopwood, Plasma Source Sci. Technol 1 p109 1992
[3] K.C. Leou, S. C. Tsai, C.H. Chang, W. Y. Chiang, T.L. Lin and C. H. Tsai, Jpn. J. Appl. Phys. 38 p4268 1999
[4] J.H. Lim,K.N. Kim,J.K. Park,J.H. Park,and G.Y. Yeom, Jpn. J. Appl. Phys. 46 p1216 2007
[5] Michael A. Lieberman, Allan J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, Wiley, New York, 1994
[6] Huddlestone, Richard H., Plasma diagnostic techniques, New York,Academic Press,1965
[7] Orlando Auciello, Daniel L. Flamm., Plasma diagnostics, Boston :Academic Press,c1989.
[8] I. Langmuir, and H. M. Mott-Smith, Phys. Rev., Vol 28 p.727 1926
[9] Alfred Grill,Cold Plasma in Materials Fabrication,New York, IEEE Press,1994
[10] V.A. Godyak,R.B. Piejak and B.M. Alexandrovich,Plasma Sources Sci. Technol. ,1 p36 1992
[11] J. E. Heidenreich Ⅲ, J. R. Paraszczak, M. Moisan, and G. Suave, J. Vac. Sci. Technol. B, Vol 5, p.347, 1987
[12] R.L. Merlino,Am. J. Phys. ,75 p1078 2007
[13] A Ganguli,B.B. Sahu and R.D. Tarey,Plasma Sources Sci. Technol.,17 015003 2008
[14] A.P. Paranjpe, J.P. McVittie and S.A. Self ,J. Appl. Phys.,67 p6718 1990
[15] I.D. Sudit and F.F. Chen, Plasma Sources Sci. Technol.,17 p162 1994
[16] V. Vahedi,M.A. Lieberman,G. Dipeso,T.D. Rognlien and D. Hewett, J. Appl. Phys.,78 p1446 1995
[17] K. Susuki,K. Konishi,K. Nakamura and H. Sugai, Plasma Sources Sci. Technol., 9 p199 2000
[18] M. Yamashita and N., Osaka,Jpn. J. Appl. Phys.,20 p1771 1981
[19] A.E. Wendt and L.J. Mahoney,Pure & Appl. Chem.,68 p1055 1996
[20] J.H. Lim,K.N. Kim and G.Y. Yeom,Plasma Process. Polym.,4 p999 2007
[21] J.H. Lim,K.N. Kim,J.K. Park,J.T. Lim and G.Y. Yeom,Applied Physics Letters,92 051504 2008