論文摘要

本論文針對下世代真空紫外光微影術-121、126 nm以及157 nm真空紫外光微影術進行材料光學特性的研究，先以真空紫外光光譜儀量測多角度入射的反射率，再使用thin film model求解材料的光學常數。
接著探討一些Low-K材料，包括HSQ和porous MSQ以及介電材料，包括二氧化矽薄膜和氮氧化矽薄膜。並且在成長氮氧化矽薄膜時，試著改變其成份氣體的流量比，探討其光學常數隨氣體流量比的變化情形。
將已分析過其光學特性的材料應用於121、126以及157 nm真空紫外光微影術中的光阻、底部抗反射層(Bottom Antireflective Coating)和衰減式相位移光罩(Attenuated Phase Shifting Mask)製作上，並且模擬其在使用上的效果以及優劣。
另外，本論文也會探討SU-8的光學特性，以及SU-8應用在灰階光罩中，在曝光波長為193 nm(ArF)、248 nm(KrF)下 的適用性。另外，我們在SU-8中加入奈米碳管(Carbon Nanotube，CNT)，探討SU-8加入奈米碳管(CNT)之後的光學特性以及奈米碳管(CNT)的濃度和曝光劑量等種種條件對於SU-8+CNT光學特性的影響。

Abstract

We propose a new method of solving the optical constants for Vacuum Ultraviolet lithography. We measure the reflectance of multi-angles incidence and then use the thin film model to solve the optical constants of materials. We discuss the optical characteristics of low-K and dielectric materials include Hydrogen silsesquioxane, Methylsesquioxane and silicon oxynitride films. And we vary the gas flow ratio to tune the optical constants of silicon oxynitride films. Then we apply the materials that analyzed to resist, bottom antireflective coating and attenuated phase shifting mask of Vacuum Ultraviolet lithography.
The other point, we propose a new method that using SU-8 polymer to fabricate gray-scale mask. SU-8 polymer has smei-absorption property and usually used in semiconductor process. This method has many advantages than conventional method. So we discuss the optical property of epoxy based SU-8 polymer and application in gray-scale mask. In addition to SU-8, we add the Carbon Nanotube (CNT) in SU-8 to enhance the absorption because the absorption of SU-8 is too weak at 365 nm (I-line) or 436 nm (G-line) exposure wavelength. Then we discuss the optical property and application of SU-8 after adding CNT. We find that exposure dosage would affect the optical constants of SU-8+CNT.

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