本實驗利用SOI晶圓製作出含有奈米通道和閘極結構的元件，使用的半導體製程技術包含光學曝光微影、乾蝕刻、濕蝕刻、電子束微影和熱氧化等。其目的在於研究閘極偏壓是否會造成奈米通道內離子分布的改變。
基於電雙層的理論，我們知道氧化物在水溶液中表面會帶有一層負電荷，而這層負電荷會影響水溶液中的離子分佈，使得奈米通道以陽離子的傳輸為主，因此實驗中試圖施加不同的閘極電壓以改變表面電荷的電位。

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