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研究生: 林怡婷
論文名稱: Mo/CIAS介面的優化與Cu(In,Al)Se2太陽電池製程之研究
Optimization of Mo/CIAS interface for fabricating Cu(In,Al)Se2 solar cell
指導教授: 曾孝明
黃惠良
口試委員: 翁恆義
孫澄源
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電子工程研究所
Institute of Electronics Engineering
論文出版年: 2014
畢業學年度: 102
語文別: 英文
論文頁數: 74
中文關鍵詞: 銅銦鋁硒太陽能電池硒化製程濺鍍製作
相關次數: 點閱:3下載:0
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  • 本研究主要延續學長姐的實驗,利用DC sputter沉積Cu-In-Al 合金靶前驅物,其合金比例為Cu:In:Al=0.9:0.85:0.15,探討在固定比例的合金靶材下提高band-gap的研究;而Mo與CIAS 間的介面問題需要透過硒化的時間、溫度與硒粉的重量解決;透過製程條件獲得覆蓋性佳與透光性佳的CdS薄膜。本研究發現,在硒化前加入約50nm的Al可以提高太陽電池的開路電壓;並加入 i - ZnO 在 CdS 和 Al:ZnO 之間改善開路電壓以及並聯電阻,最後使用 E- Gun 沈積鋁 (Al) 作為前電極增並增加電子收集的能力。
    45mg的硒粉、溫度530℃、硒化時間20分可以得到最佳的太陽電池,其開路電壓(Voc)為0.49、短路電流(Jsc)為17.97、填充因子(FF)為0.24,效率為2.11%。


    Contents Abstract Ⅱ List of figures Ⅲ List of tables Ⅶ Contents Ⅷ Chapter 1 Introduction 1 Background 1 Basic principle of Solar cells 1 1.2.1 Solar spectrum 2 1.2.2 Construction and power generation principles 3 1.2.3 Optical Absorption in a semiconductor 4 1.2.4 Operation principles of solar cell 7 Types of solar cell materials 9 Motivation 10 Organization of this thesis 11 References 11 Chapter 2 CIAS thin film solar cells 12 2.1 CIS thin-film solar cells 13 2.1.1 Crystal structure and characteristics of CIS solar cell 13 2.1.2 The advantages of CIS thin films 14 2.2 Structure and theory of Cu(In,Al) Se_2 solar cells 15 2.2.1 Basic structure of Cu(In,Al) Se_2 solar cell 15 2.2.2 The theory of Cu(In,Al) Se_(2 )solar cells 16 2.2.3 Absorption layer 17 2.2.4 Back contact layer 19 2.2.5 Buffer layer 20 2.2.6 Window layer and Front contacts 20 2.3 Organization of this thesis 20 2.4 References 21 Chapter 3 Experimental Techniques 23 3.1 Process flow for Cu(In,Al) Se_2 solar cell fabrication 23 3.1.1 Substrate cleaning 24 3.1.2 The sputtering process 25 3.1.2.1 Fabrication of back contact 27 3.1.2.2 Fabrication of Cu-In-Al precursor 28 3.1.3 Selenization process 29 3.1.4 Fabrication of CdS buffer layer 30 3.1.5 Fabrication of Window layer 32 3.1.5.1 Intrinsic ZnO layer 32 3.1.5.2 Transparent Conducting Films AZO 33 3.2 Characterization Tools 33 3.2.1 Metal Four point probes 33 3.2.2 Scanning Electron Microscope and Energy dispersive X-ray spectroscopy 34 3.2.3 Raman measurement 35 3.2.4 X-ray diffraction technique 36 3.2.5 UV/Visible Spectrophotometer 38 3.2.6 Solar simulator 39 3.2.7 Quantum efficiency measurement 40 3.2.8 Secondary Ion Mass Spectrometer, SIMS 41 3.2.9 Rutherford backscattering spectrometry, RBS 42 3.3 Organization of this thesis 42 3.4 References 42 Chap4 results and discussion 44 4-1 Mo back contact 44 4-2 CIA precursor 45 4-3 Selenization to form CIAS absorption layer 46 4-3-1 the amount of selenium powder 46 4-3-2 Different selenization process temperatures 52 4-3-3 duration of process 53 4-4 CdS buffer layer 58 4-4-1 Different deposition time 58 4-4-2 PH value 62 4-4-3 CdCl2 and CS(NH2)2 63 4-5 i-ZnO and AZO window layer 64 4-5-1 i-ZnO layer 64 4-5-2 AZO window layer 65 4-6 Front contact 67 4-7 Fabrication of Cu(In,Al)Se2 solar cells 68 4-8 Reference 77 Chapter 5 Conclusion and Future work 78 5.1 Conclusion 78 5.2 Future work 79 5.3 References 80

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