有別於傳統的機械式儲存裝置，快閃記憶體除了也擁有斷電後資料仍保存於其中的特性，其防震和相對於傳統硬碟較低能耗和較高讀寫速度的特點使得快閃記憶體逐漸成為電子產品儲存元件的主流。而單位晶元能夠儲存較多資料的三層單元(Triple-Level Cell, TLC)甚至是四層單元(Quadra-Level Cell, QLC)因其成本較低，已逐漸取代只能儲存較少資料的單層單元(Single-Level Cell, SLC)和雙層單元(Multi-Level Cell, MLC)成為快閃記憶體的主要儲存架構。然而其相對較低的耐用性，也就是使用壽命較短的問題則成為研發相關產品的主要困境。我們提出了一個方法，利用結合了條件式位元轉換和位址映對的損害感知策略，盡可能地將寫入快閃記憶體的資料轉換為對壽命危害較小的型態。最後經效能分析顯示，我們的動態損害感知策略與不經任何處理而直接將資料順序寫入的作法相比，效能改善可達15%以上。

Flash memory has not only its non-volatility as traditional Hard Disk Drive (HDD), but also shock-resistance, lower energy consumption and higher read/write speed compared with HDD. A cell with more information storage capability, such as Triple-Level Cell (TLC) or even Quadra-Level Cell (QLC), gradually becomes the mainstream of flash memory, replacing Multi-Level Cell (MLC) and Single-Level Cell (SLC) because of its comparatively lower cost. However, its lower endurance in contrast, as known as its shorter lifetime, becomes the critical problem in the development of flash memory. We propose the Dynamic Damage-Aware Strategy, compound with Conditional Bit-Flip and Address Mapping, trying to transform the data to be written in flash memory into the data type with lower damage to lifetime. With the performance evaluation, our Dynamic Damage-Aware Strategy shows 15% or even more enhancement of performance compared with directly sequential write.

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