在微波介電材料中，Ba(Mg1/3Ta2/3)O3 (簡稱BMT)是具有最高Q值(或Qxf值)者。由文獻中發現BMT在ABO3結構之B-site呈1：2型序化結構與純相之微結構、較細之晶粒狀況下有高的Qxf值。本研究以一階段法及二階段法製作，配合微量添加之MgO、添加BaTiO3，改變成分之B1-xSxMT及BMT29，藉以提昇BMT之微波特性。
在純的BMT製作中發現在1200 ℃/4 hr之煆燒溫度可得純相粉末；在氧化鎂之微量添加部份，微量添加氧化鎂主要在降低二次相之形成。由X光繞射與微結構發現二次相明顯減少，再由Qxf值(87,646)發現添加微量氧化鎂明顯提昇BMT之微波特性。

在BaTiO3的添加的部分，BaTiO3的添加可促進BMT的形成，有助於Qxf值的提昇，但過多的添加會使其序化值降低而Qxf值亦隨之降低，最好可達Qxf值約(125,832)。

而在B1-xSxMT這系列中，Sr微量取代時，會使其週期排列而提高序化度，會有最高的Qxf值(約119,460)，而繼續取代時，由於SMT Qxf值較低影響，Qxf值也逐漸降低。

在BMT29製備這部分，一階段法跟二階段法製備BMT29皆會做出兩個相的結構，一個相為BaTa2O6，另一個相為MgTa2O6與MgO，而其微波性質為高介電常數(約70左右)，低Qxf值(4000~14000)。

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