一個有發展性的快閃記憶體元件NROM已經在近幾年中被提出，其電荷是以局部性儲存於氮化矽層中。本篇論文將討論NROM在寫入抹除週期中加入分佈性延遲與閘極偏壓產生之修復效應與電荷垂直重新分佈現象對元件資料保存力的影響。這裡指的修復效應是對寫入抹除循環中在底部氧化層產生之損傷作修補的動作進而有效的改善高溫時的資料保存力，一些不同的分佈操作對應不同之修復情況和資料保存力特性也一併被討論，然後一個對應NROM分佈性寫入抹除週期的資料保存力模型也被應用來作生命期的預測。此外，一個新的兩步驟抹除之寫入抹除循環也被提出來進一步改善資料保存力，其操作方式是在抹除後加一個額外的閘極脈衝。這個新的寫入抹除週期操作可以改變NROM元件儲存之電荷的分佈情形(以電荷汲引量測技術來偵測其電荷位置)，可得出一個在高溫資料保存力中收縮的臨界電壓變化。從本篇論文的研究結果，我們成功的達成了在高密度記憶體元件應用上，對資料保存力可靠度改善的目的。

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