隨著半導體製造技術對高積集度與微縮化的不斷追求，CMP ( Chemical Mechanical Polishing,化學機械拋光) 早已經是眾所矚目的關鍵製程，也是半導體製程中達到全域平坦化最有效的辦法。
拋光墊，是化學機械拋光製程主要耗材之一；而拋光墊的許多物理特性會直接影響晶圓拋光品質及使用壽命的長短，更是關係到製程穩定性、甚至於使用者成本等的重要因素，所以，拋光墊在拋光過程中本身的物理特性，尤其是壓縮性、摩擦特性、表面粗糙度及拋光墊涵養能力…等，必須能夠保持穩定，這樣才能維持一定的加工品質。本論文主要藉由研究拋光墊的壓縮性以及摩擦特性來瞭解拋光墊在拋光過程中的變化，進而瞭解更換拋光墊的時機，以減少拋光製程的成本。

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