攜帶式電子產品、智慧型車用電子和醫療電子等產品需要非揮發性記憶體做為儲存元件，而為了達到高效能的操作，微控制單元(MCU)的高速資料處理速度是必要的。目前傳統的內嵌式記憶體都使用快閃記憶體(Flash memory)，然而快閃記憶體無法高速寫入因為需要按照一定順序操作並需要高電壓來寫入及抺除，再加上製程微縮至奈米等級以下，快閃記憶體在微縮上遇到了許多物理限制，因此新型態非揮發性記憶體的研究及發展是必需的。電阻式記憶體(RRAM)為公認相當具有潛力的新型態非揮發性記憶體之一，給予適當的寫入驅動電流，可以達到低寫入電壓、快速寫入、低功耗與等優點。
電阻式記憶體元件最常見的架構為一個電晶體加上一個電阻式記憶體單元(1T1R)，適合用在需要快速讀取和低電壓供給的內嵌式裝置應用上。隨著製程的微縮，RRAM的阻值愈來愈高，且阻值的飄移量愈也來愈來愈大，造成高阻態和低阻態之間的高低電阻比(R-ratio)縮小。因此電阻式記憶體會面臨到以下的問題：感測邊限不足夠、讀取最低操作電壓受限制和高低電阻比縮小造成的讀取速度緩慢。
因此我們提出了偏移補償感測電路(Offset-compensated Sensing Amplifier)來加快讀取速度。藉由儲存感測放大器的臨界電壓(threshed voltage)來補償感測電路的偏差，因此能操作在更低的電壓上及有更快的讀取速度，其讀取速度可比傳統的電壓感測電路快1.78倍左右，且可以補償感測放大器60%到80%的偏移量。
我們以65奈米製程實作256位元的接觸點電阻式隨機存取記憶體測試晶片，在操作電壓為1V及0.3V的情況下，量測讀取速度分別為6.233ns和349.9ns。

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