研究生: |
顏素楨 Su-Chen Yen |
---|---|
論文名稱: |
金奈米粒子在MOS電容和生物感測器上的應用 The Application of Gold Nanopaticles for Metal-Oxide-Semiconductor Capacitor and Bio-sensor |
指導教授: |
朱鐵吉
Tieh-Chi Chu 柯富祥 |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
原子科學院 - 生醫工程與環境科學系 Department of Biomedical Engineering and Environmental Sciences |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 中文 |
論文頁數: | 91 |
中文關鍵詞: | 臨界電壓 、共金結構 、漏電 |
外文關鍵詞: | Leakage |
相關次數: | 點閱:2 下載:0 |
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在本篇論文主要有兩個研究主題:(一)金奈米粒子應用在非揮發性記憶體電容上(nonvolatile nanocrystal memory capacitor) ,(二)金奈米粒子電極式生物感應器(bio-sensor)上的應用。
(一) 近年來,快閃記憶體之特性是利用電子儲存在浮動閘極中或氮化矽層(ONO)結構中,藉由臨界電壓的偏移來判別記憶與否。但是這些記憶體元件都有因為漏電嚴重問題。為了解決這各問題,才會發展出奈米記憶體。
本實驗是在室溫下利用化學自組裝(self - assembly)的方式將兩種不同粒徑(3.5nm、13nm)的金奈米粒子成長在記憶體電容上,來模擬記憶體元件的電特性。 整個製程溫度在350℃以下,跟傳統利用離子佈植(implant)和高溫快速熱退火(RTA) 等奈米記憶體製程的比較之下,減少了金粒子對SiO2的熱擴散效應。而製程溫度若超過500℃會與SiO2達到共金結構(eutectic),所以室溫下的製程可大幅改善了記憶體元件的漏電問題。實驗裡則利用I-V和C-V來量測分析電性,發現金奈米記憶體電容有大臨界電壓的偏移,同時也確認此電容是有很好的電荷儲存能力和電特性。
(二) 本實驗同樣使用化學自組裝金奈米粒子的方法來長金粒子。且利用了電子束微影來製作奈米間隙金電極。研究以不同濃度完全互補的雙股DNA(capture DNA、target DNA) 接合金奈米粒子並固著於奈米間隙電極內,產生不同的電性變化來判別DNA雜交(hybridiation)之有無。在此試圖以不同製程,降低待測DNA濃度,找出最低可偵測極限。本實驗結果外來將有助於生物晶片及生物奈米科學之發展。
There are two subjects in this thesis. (1) the application of gold nanoparticles for nonvolatile nanocrystal memory capacitor. (2) the application of gold nanoparticles for bio-sensor.
(1) In recent years, the characteristic of flash memory device rely on the shift of threshold voltage to estimate for whether the device memorizes or not, by the electron stored in floating- gate and on the nitrogen structure of silicon layer (ONO ). The formation of the floating -gate of poly silicon and of the nitrogen structure of silicon layer (ONO ) occurs serious leakage. To solove this problem, we develop nanocrystal memory device.
Two different sizes (3.5nm and 15nm) of gold nanocrystal embedded metal oxide semiconductor capacitor devices were fabricated under room temperature and were modified for their electric characteristic.
To compare the fabrication of nanocrystal memory under 350℃ with traditional impant and RTA,it reduce the diffusion on Au to SiO2.If the temperature over 550 ℃, it will occur Au-Si eutectic melt. The frabication at room temperature improve the problem of leakage of memory device. In the part experiment, we take the measurement and analysis of I-V and C-V characterstic for memory capacitors to ensure the good retention significant threshold voltage (Vt) shift and electric characterstic of the gold nanocrystals.
(2) The nano-gap electrodes are fabricated by an E-beam Lithography. Gold nanoparticles are synthesized by a chemical reduction method. The purpose of this thesis is to employ electrical detection on DNA hybridization through single-layer gold nanoparticles that are immobilized on a silicon wafer between nano-gap gold electrodes. In studies, we change the concentrations of complementary DNA (capture DNA、target DNA) to observe the variety of electric characteristic. Attempt to make different fabrication process and find out the lowest of the DNA concentrations that want to be measured. This kind of experiment can supply the information to develop the biochip and bionanotechnology.
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