高端驅動器(High Side Gate Drivers)於關閉態時具有較低的功率損耗，因此被大量的應用在電源轉換器及汽車工業等處。高端驅動器用來驅動連結至操作電壓的MOSFET或IGBT，由於這些元件的電位為浮動電位，使得高端驅動器比低端驅動器(Low Side Gate Driver) 更難設計與複雜。
除此之外，高端驅動積體電路中存在著一個棘手的問題；當低壓元件與高壓元件同時整合在同一晶片上時，在低壓電路區與高壓電路區之間需要一個電位移轉器(Level Shifter)將低壓邏輯訊號傳送到高壓控制區，一般而言，此電位移轉器是由LDMOSFETs所組成，當電位被拉升至幾百伏特的操作範圍時，LDMOSFETs的崩潰電壓必須要夠高才不會崩潰；同時，LDMOSFETs之間的漏電流也必須夠小才能避免cross-talk的問題產生。
本篇論文提出一個應用於600伏特等級的高壓積體電路的新型製程架構電位移轉器。此設計省略一般電位移轉器所需的N型磊晶層(N-epi layer)和N型深埋層(N-buried layer)，並能大幅降低製作成本，及提高電路操作的彈性。在重新設計元件後，經由T-CAD軟體的模擬以及量測，證實簡化的元件架構亦可以達到一般電位移轉器的操作特性。

High-side gate drivers are substantially used in automotive industry because of the reduced power lost in the standby mode. They are used to drive a MOSFET or IGBT that is connected to the floating terminal and operate up to several hundred volts. High-side drivers are more complicated than low-side because it is more difficult to turn off a floating transistor.
However, an important issue for high side gate drive IC is the capability of transferring low voltage logic signals to high voltage control voltage. This is normally achieved by a level shifter comprised of a set of LDMOSFET. The breakdown voltage of the LDMOSFET needs to be high enough in order to elevate the gate to several hundred volts. Meanwhile, the leakage current between LDMOSFETs has to be suppressed to avoid cross-talk problem.
In this thesis, novel process architecture of level shifter is proposed and applied in 600V rated high voltage integrated circuit (HVIC). This design leaves out the N-epi layer or N-buried layer used in conventional level shifters. By T-CAD simulation and measurement, the newly designed device is proved to perform as well as conventional level shifters with lower cost and higher operation flexibility.

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