篇論文中，我們使用兩種不同的磊晶結構的氮化鎵試片製作了準垂直型 SBD、JBS和PiN二極體。傳統的SBD二極體元件操作在反向偏壓時，存在漏電流過大而導致元件提早崩潰的問題，所以我們設計製作了不同寬度的JBS元件，嘗試降低元件操作在逆偏時所產生的漏電流。且我們在兩種不同磊晶結構的氮化鎵試片上，用了不同的製程去製作SBD元件，比較兩種製程的電性差異。
從I-V量測結果來看，JBS元件確實可以稍微降低元件的反向漏電流，而蕭基接面在製程上有經過電漿的轟擊，其漏電流明顯地上升。然而蕭基接面沒經過任何損傷破壞的SBD和PiN元件有比較好的電性表現，其崩潰電壓分別為590V和380V，而以PiN元件有較高的current on/off ratios。
從C-V量測結果來看，試片的N-層濃度不如預期的高，可能與N-層中的缺陷密度有相當大的關係，以至於我們的SBD特徵導通電阻偏大，順向導通特性不如預期。

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