SiO2/Si的半導體電晶體元件隨著尺寸的微小化，已經漸逼進其量子穿隧之極限。氧化鉿具備高介電系數的性質使其成為極具潛力取代SiO2的材料之ㄧ， 人們熟知的氧化鉿結構有：單斜晶、立方晶以及正方晶結構等；藉由第一原理的理論計算，可得到其各自的介電係數約為：20、30與70。通常於實驗室中以濺鍍法、原子層沉積技術(Atomic Layer Deposition，ALD)以及分子束磊晶成長(MBE)等方法成長氧化鉿之薄膜結構皆為單斜晶結構。其中，以分子束磊晶成長之方法成長氧化鉿磊晶薄膜，其結構為單斜晶構並具有四種晶域(domain)以及輪廓鮮明無中間層的介面。
本論文之主要工作為以多腔體分子束磊晶成長氧化鉿摻雜氧化釔之磊晶薄膜於多種半導體基材上諸如砷化鎵(100)以及矽(111)。此氧化物薄膜就有極佳的磊晶型態以及介面特性。摻雜氧化釔的方式改變了氧化鉿的晶體結構，使其自單斜晶結構變化成立方晶結構；且經由電性量測之結果，其介電係數上升至30。本論文利用國家同步輻射中心的BL17B1 wiggler等光束線對此新穎的氧化物磊晶薄膜系統做了很詳盡的結構分析。

HfO2, due to its high □ value, is the leading candidate as a gate dielectric for SiO2 in the Si technology, which with the rapid shrinkage of its transistor feature size has forced the SiO2 gate oxide thickness to reduce to 1.0nm, the quantum tunneling limit. There are three known structures of HfO2: monoclinic, cubic, and tetragonal with the dielectric constants being ~20, ~30, and ~70, respectively, as obtained from the first-principles calculation. The common structure of HfO2 thin films from sputtering, atomic layer deposition, and MBE is monoclinic phase. Moreover, the MBE oxide films are epitaxially grown on GaAs with four domains and atomically sharp interface without any interfacial layer.
In this work, HfO2 doped with Y2O3 have been grown on various semiconductors substrates, such as GaAs (100) and Si (111) etc., in a multi-chamber MBE system with electron beam evaporation from two separate charges of HfO2 and Y2O3. The oxide films were found to grow epitaxially on the semiconductors, again with very sharp interfaces. Furthermore, the structure of the oxide films was found to change from the monoclinic phase with a low dielectric constant to the cubic phase with a dielectric constant above 30. The structure transformation of HfO2 by doping yttrium increases the dielectric constant of it. The structural characteristics of these thin oxide films were studied using high-resolution x-ray diffraction conducted at BL17B1 wiggler beamline in Taiwan’s National Synchrotron Radiation Research Center.

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