摘要
增強氧化鋅奈米線電阻轉換性質的方法有兩種。第一種方式是藉由奈米棒的幾何結構去限制導電燈絲成長方向。第二點利用錳的摻雜使記憶窗口增大。此外,電阻式記憶體有高阻值比，更快的寫入速度等優勢且非常適合開發為高密度記憶體。
首先 , 我們可以成功地藉由水熱法控制不同直徑和長寬比的錳摻雜氧化鋅奈米棒層。隨後，我們分析了錳摻雜氧化鋅奈米棒層的表面形貌，晶體結構和組成藉由SEM，X-ray，TEM，EDX和PL。
我們測量其電阻轉換行為的錳摻雜氧化鋅奈米棒層藉由Keithley 4200。在我的實驗中我們發現其電阻轉換特性可以分為三個討論範疇。首先,相對於未摻雜和Mn摻雜ZnO奈米棒層，我們測量彼此不同的電阻轉換行為。第二，我們也設計了不同的奈米元件設計不同的Mn含量和長度的參數來討論的電阻轉換特點。此外，錳摻雜奈米棒層元件藉由控制保護電流而所引起多態記憶效應被觀察到。

There are two approches to enhance the resistive switching behavior in ZnO-based RRAM. One is trying to improve the resistive switching characteristics through the nanorods-limited geometry in ZnO-based RRAM devices. The other is trying to adjust concentration of dopant, Mn, which would increase the operative resistance window as the concentration increases. In addition, the higher resistance ratio, the faster programming speed properties of RRAM are suitable for development as a high-density memory.
First of all, Mn-doped ZnO nanorods can be controlled growth successfully with different diameter and aspect ratio by hydrothermal method. We analyzed the surface morphology, crystalline structure and the composition of Mn-doped ZnO nanorods by SEM, XRD, TEM, EDX, and PL.
We measured resistive switching behaviors of the Mn-doped ZnO nanorods by Keithley 4200. The resistive switching characteristics were observed and fell into three categories. First, different resistive switching behaviors can be observed in different types of devices, undoped and Mn-doped ZnO nanorods. Second, the resistive switching characteristics can be modified by different contents of Mn and different lengthes of ZnO nanrods. Furthermore, multistate memory effects could be manipulated by applying different current compliance in the device.

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