本研究利用電漿輔助化學氣相沉積鍍製富矽二氧化矽薄膜，再用高溫退火來形成具有奈米矽晶通道的二氧化矽薄膜。實驗顯示，退火後富矽二氧化矽薄膜的矽含量會隨著鍍膜時矽甲烷比率的提高而增加，其平均晶粒約在 5nm上下。 在非常薄之富矽二氧化矽薄膜 (~2nm)內，也可以觀察到矽晶在介面與薄膜內部皆可成核，並在充分退火時成長為完整的奈米矽晶通道。

PECVD is used to deposit silicon-rich silicon dioxide thin film. After annealing process, it turns out to be silicon dioxide thin film containing nano-silicon channel. The experiment shows that silicon content increases when silane ratio was raised during deposited process. The average grain size of crystalline silicon is 5 nm. Nucleation phenomenon is observed inside the ultrathin silicon-rich silicon dioxide film and the interface. Furthermore, silicon nano channels through thin silicon-rich silicon dioxide are formed with sufficient anneal.

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