相變化記憶體(Phase change memory)是一種逐漸受到重視，且目前有相當多單位投入研究的新世代記憶體，它具有高速存取以及非揮發性的兩項重要特點，及其他如非破壞讀取、消耗電流低、多階儲存、單位記憶容量大及製作成本低等優點。
　　本研究以SiO2/Si為基板鍍製Ge2Sb2Te5(1000Å)單層膜及TiW(1000Å)/Ge2Sb2Te5(1000Å)雙層膜，Ge2Sb2Te5單層膜初鍍時的應力約為零，但在雙層膜內的TiW膜初鍍時卻有約400 ~ 1000(Mpa)的壓應力，TiW膜內相對較大的壓應力，可能與TiW靶材內的W原子反彈較多的Ar原子撞擊TiW膜有關。前述單層膜及雙層膜試片於初鍍時的附著力分別為100.9nt及8.2nt，在230℃（或400℃）快速熱退火處理後附著力會分別減小及增加到41.9（或22.1nt）及18.9（或24.1nt），雙層膜內的TiW膜的應力並會減小。Energy Dispersive Spectrometer (EDS)結果顯示所有試片皆由Ge2Sb2Te5/SiO2的界面斷裂，而由Secondary Ion Mass Spectrometer (SIMS)縱剖面觀察發現各膜層間原子會互相擴散，這可能增加TiW/Ge2Sb2Te5界面間的附著力，使得斷裂易發生在Ge2Sb2Te5/SiO2界面，此外，薄膜附著力與應力明顯相關。

1. 莊達人, “ VLSI 製造技術”,5ed, 高立圖書(2002), Ch.1,p.1-11
2. K. F. Strauss , T. Daud, “Overview of Radiation Tolerant Unlimited Write Cycle Non-Volatile Memory”, Aerospace Conf., IEEE Proc. (2000), p.399-408
3. Lai, S.;Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE
4. T. Lowrey, “Ovonic Unified Memory”, Ovonyx Inc.(1999)
5. S. Lai, T. Lowrey, “ OUM – A 180nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, Conf. IEEE Proc. (2001), p.803-806
6. J. Maimon, E. Spall, R. Quinn, S. Schnur, “Chalcogenide-Based Non-Volatile Memory Technology”, Conf. IEEE Proc.(2001),p.2289-2294
7. A. Pirovano, A. L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, R. Bez, “Electronic Switching Effect in Phase-Change Memory Cells”, IEDM (2002), p.923-926
8. S. Tyson, G. Wicker, T. Lowrey, S. Hudgens, K. Hunt, “Nonvolatile, High Density, High Performance Phase-Change Memory”, Aerospace Conf., IEEE Proc. (2000), p.385-390
9. D. P. Gosain, M. Nakamura, T. Shimizu, M. Suzuki, S. Okano, “Nonvolatile Memory Based on Reversible Phase Transistion Phenomena in Telluride Glasses”, Jpn. J. Appl. Phys. Vol 28, No.6 (1989),p.1013-1018
10. K. Nakayama, T. Kitagawa, M. Ohmura, M. Suzuki, “Nonvolatile Memory Based on Phase Transition in Chalcogenide Thin Film”, Jpn. J. Appl. Phys. Vol 32, No.1 (1993), p.564-569
11. K. Nakayama, K. Kojima, F. Hayakawa, Y. Imai, A. Kitagawa, M. Suzuki, “Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses”, Jpn. J. Appl. Phys. Vol 39, No.11(2000),p.6157-6161
12. K. Nakayama, T. Kitagawa, K. Hashimoto, K. Ohtuka, A. Kitagawa, ”Nonvolatile Memory Based on Reversible Phase Transition in Chalcogenide Semiconductor Thin Film”, Elec. Man. Tech. Sym., Proc. 1993 Jpn. Intl. (1993) , p.93-96
13. S. R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures “ Phys. Rev. Lett. , Vol. 21, No.20 (1968) , p. 1450-1453
14. A. Madan, M. P. Shaw “ The Physics and Applications of Amorphous Semiconductors”, Academic Press(New York)(1988), Ch.4-Ch.5, p.318-454
15. D. Alder, “Switching Phenomena in Thin Films”, J. Vac. Sci. Technol., Vol. 10, No. 5 (1973),p.728-738
16. S. Prakah, S. Asokan, D. B. Ghare, “Easily reversible memory switching in Ge-As-Te glasses”, J. Phys. D: Appl. Phys. Vol.29 (1996), p.2004-2008
17. S. R. Ovshinsky, “An Introduction of Ovonic Research”, J. Non-Cryst. Solids, Vol. 2 (1970), p. 99-106
18. D. Alder, S. C. Moss, “Amorphous Memories and Bistable Switches”, J. Vac. Sci. Technol., Vol. 9, No. 4 (1972), p.1182-1189
19. R. G. Neale, D. L. Nelson, G. E. Moore, “Nonvolatile and reprogrammable, the read-mostly memory is here”, Electronics, Vol.28 (1970), p.56-60
20. Y.H Ha ,J.H. Yi,H.Horii, VLSI Technology,2003.June 10-12 , p.175-176
21. Horii, H.; Yi, J.H.; Park, J.H.; Ha, Y.H.; Baek, I.G.; Park, S.O.; Hwang, Y.N.; Lee, S.H.; Kim, Y.T.; Lee, K.H.; U-In Chung; Moon, “A Novel cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, 2003 Symposium on VLSI Technology Digest of Technical Papers, 10-12 June 2003, p.177 – 178
22. J.Maimon, K.Hunt, J.Rodgers, L.Burcin, and K.Knowles,Proceedings of Nonvolatile Memory Technology Symposium,Honolulu,HI(2002)
23. S. Tyson, G. Wicker, T. Lowrey, S. Hudgens, and K. Hunt, 2000 IEEE
Proceedings of Aerospace Conference, Big Sky, MT ~IEEE, New York,
2000!, p. 385–390.
24. Maimon, R. Quinn, and S. Schnur, 2001 IEEE Proceedings of Aerospace
Conference, Big Sky, MT ~IEEE, New York, 2001!, p. 2289–2294.
25. Lai and T. Lowrey, Tech. Dig. - Int. Electron Devices Meet. 36.5.1 (2001)
26. Gill, T. Lowrey, and J. Park, Digest of Technical Papers of International
Solid-State Circuits Conference (2002), p.202.
27. D. W. Jacobson, “Importance of Accurate Thermal Analysis”, Proceedings of Annual Reliability and Maintainability Symposium (1989), p.465–469.
28. Lai ,S.;Electron Devices Meeting, 2003.IEDM `03 Technical Digest.IEEE
29. E. J. Evans, J. H. Helbers, S. R. Ovshinsky, “Reversible conductivity transformations in chalcogenide alloy films”, J. Non-crystal. Solids, Vol.2 (1970), p.334-346
30. L. A. Coward, “Experimental Evidence of Filament Forming in Non-Crystalline Chalcogenide Alloy Threshold Switch”, J. Non-crystal. Solids, Vol.6 (1971), p.107-112
31. R. Pinto, “Threshold and memory switching in thin films of the chalcogenide systems Ge-As-Te and Ge-As-Se”, The Solid Films, Vol. 7 (1971), p.391-404
32. D. D. Thornburg, “Memory switching in amorphous arsenic triselenide”, J. Non-crystal. Solids, Vol.11 (1972), p.113-120
33. G. C. Vezzoli , I. H. Pratt, “A Study of Switching in Non-crystalline Chalcogenide Thin Films at Room and Liquid Nitrogen Ambient Temperatures Using Aluminum and Molybdenum Electodes”, Thin Solid Films, Vol. 14 (1972), p.161-187
34. C. H. Sie, M. P. Dugan, S. C. Moss, “Direct Observations of Filaments in the Ovonic Read-Mostly Memory”, J. Non-Cryst. Solids, Vol. 8-10 (1972), p.877-884
35. R.Vogel Nicolaides, “Amorphous Semiconductor Devices Displaying Memory in One Polarity and Threshold Switching in the Opposite Polarity”, Appl. Phys. Lett., Vol. 24, No. 7 (1974), p.331-333
36. C. L. Dargan, P. Burton, R. M. Redstall, “The fabrication and properties of chalcogenide glass memory arrays”, Int. J. Electronics, Vol.38, No.6(1975), p.711-727
37. K. E. Petersen, D. Adler, “On state of amorphous threshold switches”,J. Appl. Phys., Vol.47, No.1(1976),p.256-263
38. S. Bernacki, K. Hunt, S. Tyson, S. Hudgens, B. Pashmakov, Wally Czubatyj, ”Total Dose Radiation Response and High Temperature Imprint Characteristics of Chalcogenide Based RAM Resistor Elements”, IEEE Trans. on nuclear science, Vol. 47, No.6 (2000), p.2528-2533
39. 張延瑜, 國立清華大學碩士論文, 1999.
40. N. Yamada, E. Ohno,. N. Akahira, K. Nishiuchi, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory”, J. Appl. Phys. Vol 69, No.5 (1991), p.2849-2856
41. I. Friedrich, V. Weidenholf, W. Njoroge, P. Franz, M. Wuttig, “Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements”, J. Appl. Phys.,Vol. 87, No.9 (2000), p.4130-4134
42. V. Hoffman, Solid State Technology(1983), p119
43. S. E. Babcock, K. N. Tu, “Titanium-tungsten contacts to Si The effects of alloying on Schottky contact and on silicide formation”, J. Appl. Phys. Vol.53, No.10 (1982), p.6898-6905
44. V. G. Glebovsky, E. A. Markaryants, E. V. Titov, Materials Letters, Vol.21(1994), p.89-93
45. J.R. Bosnell and C.B. Thomas , “on the mechanism of Threshold and Memory Switcing in Glassy Chalcogenide Alloy Devices”,Phil.Mag,1973,vol27,p.665
46. J. R. Bosnell, C. B. Thomas, “Preswitching Electrical Properties,’Forming’, and Swithcing in Amorphous Chalcogenide Alloy Threshold and Memory Devices”, Solid State Electronics, Vol.15 (1972), p1261-1271
47. N. Yamada, Proc. SPIE, Vol.3109(1997),p.28
48. 洪裕峰, 國立清華大學碩士論文, 2004
49. T.Ohta,M.Uchida,K.Yoshioka,K.inoue,T.Akiyama,S.Furukawa,K.Kotera and S.Nakamur, SPIE,Vol.078(1989),p.27
50. Dae-Hwan Kang, Dong-Ho Ahn, Ki-Bum Kim,a) J. F. Webb, and Kyung-Woo YiJ. “One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F[sup 2] memory cell (F = 0.15 mu m)”, Appl. Phys., Vol. 94, No. 5, 1 September 2003
51. Pirovano, A.; Lacaita, A.L.; Benvenuti, A.; Pellizzer, F.; Hudgens, S.; Bez, R.;
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International , 8-10 Dec. 2003 ages:29.6.1 - 29.6.4
52. 陳介方, 國立清華大學碩士論文, 2003
53. F. Shi, K. Chang, and K. C. Hsieh, “Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors”, J. Appl. Phys., Vol. 95, No. 3(2004),p909-912
54. F. F. Shi, S. MacLaren, C. Xu, K. Y. Cheng, and K. C. Hsieh, “Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology : Interface adhesion and mechanical strength”, J. Appl. Phys., Vol. 93, No. 9(2003), p.5750-5756
55. G. G. Stoney, Proc. R. Soc. London, Ser. A 82(1909), p172-175
56. J. A. Thornton, and D. W. Hoffman, “Internal stress in titanium, nickel, molybdenum, and tantalum films deposited by cylindrical magnetron sputtering”, J. Vac. Sci. Technol., Vol. 14, No. 1(1977),p164-168
57. A. Witvrouw, and F. Spaepen, “Viscosity and elastic constants of amorphous Si and Ge”, J. Appl. Phys., Vol. 74, No. 12(1993),p7154-7161
58. U. Laudahn, S. Fähler, H. U. Krebs, A. Pundt, M. Bicker, U. v. Hülsen, U. Geyer, R. Kirchheim, “Determination of elastic constants in thin films using hydrogen loading” , Appl. Phys. Lett. Vol. 74, No. 5(1999), p.647-649
59. 汪建民主編, “材料分析”,1st,中國材料科學學會(1998), Ch.23,p.676
60. T. P. Leervad Pedersen, J.Kalb, W. K. Njoroge, D. Wamwangi, M. Wuttig, and F. Spaepen, “Mechanical stresses upon crystallization in phase change materials”, Appl. Phys. Lett. Vol. 79, No. 22(2001), p.3597-3599
61. J. Kalb, F. Spaepen, T. P. Leervad Pedersen, and M. Wuttig, “Viscosity and elastic constants of thin films of amorphous Te alloys used for optical data storage”, J. Appl. Phys., Vol. 94, No. 8(2003), p4908-4912
62. F. C. Marques, P. Wickboldt, D. Pang, J. H. Chen, and W. Paul, “Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge”, J. Appl. Phys., Vol. 84, no. 6(1998), p3118-3124
63. Y. H. Ha, J. H. Yi, H. Horii, J. H. Park, S. H. Joo, S. O. Park, U-In Chung and J. T. Moon, “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, 2003 Symposium on VLSI Technology Digest of Technical Papers.
64. H. Zogg, S. Blunier, A. Fach, C. Maissen, P. Muller, “Thermal-mismatch-strain relaxation in epitaxial CaF2,BaF2-CaF2,and PbSe-BaF2-CaF2 layers on Si(111) after many temperature cycles”, Phys. Rev. B., Vol. 50, No. 15(1994), p10801-10810
65. J. B. Vella, S. M. Smith, A. A. Volinsky, I. S. Adhihetty, “Adhesion Quantification of Post-CMP Copper to Amorphous SiN Passivation by NanoIndentation”, Mat. Res. Soc. Symp. Proc., Vol. 649(2001), Q6.1.1-Q6.1.6
66.K. O’Donnell, J. Kostetsky, “Stress Controckl in NiV, Cr and TiW Thin Films used in UBM and Backside Metallization”, IMAPS Flipchips 2002.
67.M. Ohring, “The Materials Science of Thin Films”, Academic Press(Boston), first edition(1992), p727-730
68.W. Bruckner, F. Macionczyk, and G. Reiss., “Mechanical Properties of CuNi Films”Mat. Res. Soc. Symp. Proc., Vol.436(1997), p47-53
69.R. Saha, R. B. Inturi, J. A. Barnard, “Effect of thickness and annealing on stress in tantalum and tantalum nitride thin film hard coatings”, Mat. Res. Soc. Symp. Proc., Vol.436(1997), p529-534
70.C. Cabral, Jr., L. A. Clevenger, and R. G. Schad, “Compressive Stress increase with repeated thermal cycling in tantalum(oxygen) thin films”, Mat. Res. Soc. Symp. Proc., Vol.308(1993), p57
71.D. Lide, “Handbook of Chemistry and Physics”, CRC Press, 72 edition(1991).
72.C. Y. Ting, M. Wittmer, S. S. lyer, and S. B. Brodsky, “Interaction Between Ti and SiO2”, J. Electrochem .Soc., Vol. 131, No. 12(1984), p2934-2938