由於原子層化學氣相沉積法(Atomic layer chemical vapor deposition, ALCVD )據有很好的膜厚控制能力、階梯覆蓋性、並可以在低溫下進行實驗等優點，是沉積極薄薄膜的理想方法，所以目前已經受到科學界以及業界的重視。
在本實驗中，我們將使用原子層化學氣相沉積法在鍺基板上面去沉積HfO2/La2O3疊層結構，並在沉積氧化鑭的時候使用La(iPr2-FMD)3做為前趨物，然後使用氧氣電漿做為鑭的氧化劑；而沉積氧化鉿的時候使用TEMAH (Hf(NC3H8)4)做為鉿的前趨物，用重水當氧化劑。
本實驗第一部分將討論在固定厚度下，去討論不同鑭鉿厚度比例下對薄膜性質的影響，藉由觀察分析電性和物性的量測結果，去判斷何種厚度下能有最好的改善效果。
而在第二部分，我們根據第一部分的結果，固定HfO2/La2O3疊層結構的厚度，並在沉積氧化層之前，先用不同比例的氮氫混合電漿處理鍺基板表面，再進行材料分析和電性量測，去觀察氮氫混合電漿對元件性質的影響。

1.G. E. Moore,” Crammig more components onto integrated circuits”, Electronics, vol.38, pp.114-117, 1965.
2.Donald Neamen ,”an introduction to semiconductor devices”,p.131
3.Koji KITA, Sho SUZUKI, Hideyuki NOMURA, Toshitake TAKAHASHI,Tomonori NISHIMURA, and Akira TORIUMI,” Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics”, Japanese Journal of Applied Physics, Vol. 47, No. 4, 2008, pp. 2349–2353.
4.Yasuhiro Oshima,Michael Shandalov, Yun Sun, Piero Pianetta, and Paul C. McIntyre,” Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density”, APPLIED PHYSICS LETTERS,vol. 94, 183102 (2009)
5.M. Milojevic, R. Contreras-Guerrero, M. Lopez-Lopez, J. Kim, and R. M. Wallace,” Characterization of the “clean-up”of the oxidized Ge(100)surface by atomic layer deposition”, APPLIED PHYSICS LETTERS ,vol. 95, 212902 (2009)
6.Shankar Swaminathan, Yasuhiro Oshima, Michael A. Kelly, and Paul C. McIntyre,” Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3:In situ surface characterization”, APPLIED PHYSICS LETTERS, vol. 95, 032907 (2009)
7.G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A.Dimoulas, E. K. Evangelou, J. W. Seo, and Ch. Dieker,” Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices”, J. Appl. Phys.vol.103, 014506 (2008)
8.J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, and H.Iwai,”Improvement of interfacial properties with interfacial layer in La2O3/Ge structure ”, Microelectron. Eng.vol. 84, 2336 (2007)
9.G. Mavrou, S. F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos, A.Dimoulas, E. K. Evangelou, J. W. Seo, and Ch. Dieker,” Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric ”, Microelectron.Eng. vol. 84, 2324 (2007)
10.A. Molle and M. Perego, Md. N. K. Bhuiyan, C. Wiemer, G. Tallarida, M.Fanciulli,” The interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growths”, J. Appl. Phys.vol. 102, 034513 (2007)
11.M. Houssa, G. Pourtois, M. Caymax, M. Meuris, and M. M. Heyns,” First-principles study of the structural and electronic properties of (100)Ge/Ge(M)O2 interfaces (M = Al, La, or Hf)”, Appl.Phys. Lett.vol. 92, 242101 (2008)
12.D.H. Triyoso ,R.I. Hegde , J.M. Grant , J.K. Schaeffer ,D.Roan , B.E. White, Jr., and P.J. Tobin ,“Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition”, J. Vac. Sci. Technol. B 23(1) (2005)
13.J. M. J. Lopes,a U. Littmark, M. Roeckerath, St. Lenk, J. Schubert , and S. Mantl , and A. Besmehn , “Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-k films prepared by molecular beam deposition”, Journal of applied physics 101, 104109 (2007)
14.Woong-Sun Kim, Sang-Kyun Park, Dae-Yong Moon, Tae-Sub Kim,Byoung-Woo Kang, Jin-Kyo Seo, Heon-Do Kim and Jong-Wan Park,“Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films”, Journal of the Korean Physical Society, Vol. 53, No. 6 ( 2008)
15.Chen Yang , Huiqing Fan , Shaojun Qiu , Yingxue Xi , Yunfei Fu ,“Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation”, Journal of Non-Crystalline Solids 355 (2009)
16.John Robertson ,“Maximizing performance for higher K gate dielectrics”, Journal of applied physics 104, 124111 (2008)
17.Wei He,Daniel S.H.Chan, Sun-Jung Kim, Young-Sun Kim, Sung-Tae Kim,and Byung Jin Cho,“Process and Material Properties of HfLaOx Prepared by Atomic Layer Deposition”, Journal of The Electrochemical Society, 155 (10) (2008)
18.Woong-Sun Kim, Tae-Sub Kim, Byung-Woo Kang, Myoung-Gyun Ko, Sang-Kyun Park, and Jong-Wan Park ,” Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition”, J. Vac. Sci. Technol. B 26(4) (2008)
19.Beom-Yong Kim, Myoung-Gyun Ko, Eun-Joo Lee, Min-Soo Hong, You-Jin Jeon and Jong-Wan Park ,“Atomic Layer Deposition of La2O3 Thin Films by Using an Electron Cyclotron Resonance Plasma Source”, Journal of the Korean Physical Society, Vol. 49, No. 3 (2006)
20.P. Pisecny, K. Husekova, K. Frohlich, L. Harmatha, J. Soltys, D. Machajdik, J.P. Espinos, M. Jergel, J. Jakabovic,“Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology”, Materials Science in Semiconductor Processing (2004)
21.H. X. Xu, J. P. Xu, C. X. Li, and P. T. Lai,”Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient”, Appl. Phys. Lett. 97, 022903 (2010)
22.R.Chou, ICSTCT 2004 presentation
23.B. Cheng, M. Cao, R. Rao, A. Inani, P. V. Voorde, W. M. Greene, J. M. C. Stork, Y. Zhiping, P. M. Zeitzoff, and J. C. S. Woo, IEEE Trans. Electron Devices, 46, no. 7, pp. 1537–1544, Jul. 1999.
24.J. Robertson, P.W. Peacock, in: M. Houssa (Ed.), High-κ Gate Dielectrics, IOP, London, 2003, p. 372.
25.K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskelä,“Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors”, Chem. Vap. Deposition 8, 199 (2002)
26.G. Papoian, J. K. Norskov, R. Hoffmann, “A comparative theoretical study of the hydrogen, methyl, and ethyl chemisorption on the Pt(111) surface”, J. Am. Chem. Soc. 122, 4129 (2000).
27.D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, “Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors”, Chem. Mater. 14, 4350 (2002).
28.M.-T. Ho, Y. Wang, R. T. Brewer, L. S. Wielunski, Y. J. Chabal, N. Moumen, and M. Boleslawski, “In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition”, Appl. Phys. Lett. 87, 133103 (2005)
29.李雅明，”固態電子學”，全華科技圖書 (1995)
30.Sang Bom Kang, Yun Sook Chae, Mee Young Yoon, Hyeun Seog Leem, Chang Soo Park, Sang In Lee, and Moon Yong Lee, “Low temperature processing of conformal TiN by ACVD (Advanced chemical vapor deposition) for Multilevel Metallization in high density ULSI devices”, IEEE, IITC 102-104 (1998)
31.G. Mavrou, S. F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J.W. Seo, Ch. Dieker,” Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric”, Microelectronic Engineering 84 (2007) 2324–2327
32.A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, and A.Sotiropoulos,“Intrinsic carrier effects in HfO2 –Ge metal–insulator– semiconductor capacitors”, Appl. Phys. Lett., vol. 86, no. 22, 223507 (2005)
33.鐘維修 ,”以原子層化學氣相沉積法鍍製氧化鑭、二氧化鉿及鑭 – 鉿氧化物之製程及材料特性”, 清華大學碩士論文(2009)
34.Dimoulas,P. Tsipas, and A. Sotiropoulos,” Fermi-level pinning and charge neutrality level in germanium,” APPLIED PHYSICS LETTERS 89, 252110 (2006)
35.G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A.Dimoulas, C. Marchiori, and J. Fompeyrine , “Very high-k ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates”, Appl. Phys. Lett. 93, 212904 (2008)
36. Qing-Qing Sun, Yu Shi, Lin Dong, Han Liu, Shi-Jin Ding, and David Wei Zhang,” Impact of germanium related defects on electrical performance of hafnium oxide”, Appl. Phys. Lett. 92, 102908 (2008)
37.N. Lu, W. Bai, A. Ramirez, C. Mouli, A. Ritenour, M. L. Lee, D. Antoniadis, and D. L. Kwong,” Ge diffusion in Ge metal oxide semiconductor with chemical vapordeposition HfO2 dielectric”, Appl. Phys. Lett. 87, 051922 (2005)
38.P. J. McWhorter and P. S. Winokur ,” Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors”, Appl. Phys. Lett. 48, 133 (1986)
39.林民和,”以氮氫和水氣電漿處理改善原子層化學氣相沉HfO2高介電閘極氧化薄膜之熱穩定性”,清華大學碩士論文(2009)