中空陰極電漿(Hollow Cathode Plasma)為一常見之電漿，具有高密度之電漿特性。類鑽碳薄膜具良好機械性質，常被應用於保護層，而摻氮類鑽膜有良好的成膜穩定性，耐溫可以達攝氏700度。本研究以Hollow Cathode Plasma沉積類鑽碳膜。同時研究電極深度對電漿特性以及類讚膜與摻氮類鑽膜特性之影響。研究發現電漿密度隨電極深度增加而增加，且電漿密度可比傳統電容式耦合電漿源高出十倍。在適當電極深度與操作參數下，可以提升類鑽膜沉積速率一倍，並同時提高硬度。研究中也可發現摻氮類鑽膜的氮含量受電極深度影響甚小，沉積速率提升效果與類鑽膜相吻合。

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