近年來，一維矽及矽化物奈米結構擁有特殊的性質且有蠻大的潛力應用在半導體或光電產業上，因此受到很多研究團隊的注意。而我們的研究主要著重在一維矽奈米結構的製備，及利用穿透式電子顯微鏡進行臨場 (In situ) 加熱並觀察研究奈米尺度下矽奈米帶(nanoribbon) 轉換成鎳矽化物奈米帶的過程及其相關的成長機制。
藉由簡單的裝置及利用HF/AgNO3 溶液，在適當實驗條件下可成功地快速製備出大量且規則的單晶矽奈米帶，成長方向與所用之矽基板方向相同，而矽奈米帶的長度則可由反應時間來控制。
接著，使用鎳網 (300 mesh Ni grid) 來提供鎳原子，將矽奈米帶置於其上，並利用In situ TEM 來加熱此「矽奈米帶/鎳網」的系統，可觀察到鎳原子擴散進矽奈米帶並轉變成鎳矽化物奈米帶的過程，且證明在奈米尺度下，鎳/矽系統中主要的擴散原子為鎳原子。在此系統裡，鎳網可提供之鎳原子遠多於散佈在鎳網上矽奈米帶所含之矽原子，因此所形成的鎳矽化物奈米帶都屬於含鎳較多的相。此外，我們成功地對同一根矽奈米帶進行變溫的觀察，錄下其不同溫度下轉換的過程後，經分析及計算知道其屬於擴散控制的成長機制，再由阿瑞尼士 (Arrhenius) 方程式可求得形成鎳矽化物所需的活化能。使用此系統 (矽奈米帶/鎳網) 進行加熱並臨場觀察的實驗，對於釐清奈米尺度下矽化的機制及過程是很有益處的。
另外，我們將矽及鎳矽化物奈米帶的高分辨原子影像 (HRTEM image) 與模擬軟體所模擬出的原子影像相比對，可決定出奈米帶的厚度，亦即可知道奈米帶在矽化反應前後的厚度差別。

Arrays of aligned silicon nanoribbons were prepared on silicon substrates in the solution containing aqueous HF and AgNO3 by metal-nanoparticel-assisted etching technique.
The in situ investigations of a solid-state reaction where the silicon nanoribbons transformed into nickel silicide nanoribbons are achieved in the silicon nanoribbons/Ni grid system. The results indicate that Ni atoms are still the dominant diffusing species in Ni/Si system at nanometer scale. The condition for the in situ experiments is under Ni-rich situation so that the final phases of the formed silicides are all Ni-rich phases. We also investigate the transformation of Si nanoribbons into nickel silicide nanoribbons at elevated temperature. The activation energy (1.06 eV) for the growth of nickel silicide nanoribbons was obtained from an Arrhenius plot. The approach is useful to clarify the silicidation mechanisms and phase transformation at the nanoscale.
In addition, using the method of comparison of the experimental high-resolution TEM images with the simulated images, the thickness of nanoribbons could be determined.

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