大氣電漿束能夠在大氣壓下均勻的放電，對於材料的表面處理有著良好的效果。比較於低氣壓電漿，能省去昂貴的設備，以及避免因為真空腔體所帶來的處理尺寸的問題。而聚亞醯胺材料由於具有良好的物理以及化學性質，已被廣泛應用在半導體工業以及顯示器工業，其有機高分子的結構，與電漿所產生的活性粒子能夠發生反應而被蝕刻與改質。
本實驗中以氦氣混合少量氧氣，使用頻率為13.56MHz射頻所激發的大氣電漿束能夠有效的對聚亞醯胺薄膜造成蝕刻，並以改變氦氣以及氧氣流量控制其蝕刻速率，且經過分析反應過程中所產生的臭氧濃度與蝕刻效率的關係進一步研究其蝕刻機制。在相同氦氣流量下，增加氧氣流量能提升蝕刻效率，但會有飽和的趨勢，且蝕刻效率飽和伴隨著臭氧濃度大幅攀升；而氦氣的流量越高，蝕刻的效率越高，臭氧濃度越低，臭氧的產生造成氧原子之下降，由此推論出氧原子為造成蝕刻的主要因子。而蝕刻過後的聚亞醯胺薄膜表面將被改質，表面粗操度由0.267 nm上升至1∼2 nm，且表面能明顯增加，其中極性項由大幅提昇，非極性項降低，接觸角由80.14˚下降至20˚，薄膜表面親水性增加。

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