本研究利用水熱法，合成具有奈米粒子的金屬半導體化合物 (氧化鋅 ZnO及銦鎵鋅氧化物 IGZO) 溶液，並且以ZnO 及IGZO材料做為主動層的薄膜電晶體 (Thin Film Transistors) 之特性探討。結晶相的ZnO 及IGZO薄膜可在低溫 (95 °C) 下形成。該薄膜不僅是晶粒尺寸和形狀均勻，且截面出現緻密的膜。其銦鎵鋅氧化物 (IGZO) 之電晶體元件具有良好的交換能力 (switch ability)，高的汲極電流 (> 105 安培) 和低的臨界電壓 (0.9 V)。其場效遷移率為2.3 cm2/V-s，電流的開關比超過 106，可做為商用薄膜電晶體之應用。
我們還研究了ZnO和IGZO薄膜受到不同能量的電射激光照射後，其結構、光學和電學之性能探討。該結晶結構的增強是隨著雷射的能量增加而增強。透光率也分別從85 ％ 增至92 ％　(氧化鋅ZnO) 及75 ％ 增至89 ％ (銦鎵鋅氧化物IGZO)。氧化鋅和銦鎵鋅氧化物之電晶體元件，其遷移率各分別增加了2.8倍（0.19 cm2/V-s 增至0.5 cm2/V-s）及5倍（1.3 cm2/V-s 增至7.65 cm2/V-s）。

We fabricated a bottom-gate thin film transistor (TFT) with the active layer of Indium-Gallium-Zinc Oxide (IGZO) nano particles prepared from water solution. The poly-crystallized InGaZn2O5 films were formed by spin-coating method and post-baked at low temperature (95 °C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but the cross section of the film appears dense, considering the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (>105) and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm2/V-s and current on-off ratio over 106 are very promising for TFT applications.
We also investigated the zinc oxide (ZnO) and IGZO thin films subjected to laser irradiation. Structural, optical and electrical properties of the as-deposited and laser irradiated films at different laser energies were studied. The crystallinity of the structure increased and it became conductive after laser treatment. The transmittances without/with laser irradiation had a net rise of 85 % to 92 % and 80 % to 95 % (@550nm) for 250 nm ZnO and IGZO films, respectively. The quantity of IGZO enhanced transmittance was higher than that of ZnO. We fabricated thin film transistors (TFTs) with ZnO and IGZO as the active layer. The as- deposited ZnO/IGZO TFT devices had a field effect mobility of 0.19 cm2/V-s and 1.3 cm2/V-s, respectively. The electrical characteristics increased by more than 2.8 times for ZnO and by 5 times for IGZO of un-irradiated laser treatment. The field-effect mobility of ZnO and IGZO are 0.5 cm2/V-s and 7.65 cm2/V-s

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