電阻式非揮發性記憶體（RRAM）深具競爭潛力，具備操作電壓低、快速操作時間、結構簡單化、可多位元記憶、耐久性佳、記憶元件面積縮小及非破壞性讀取等優勢，並且擁有低成本的競爭力，發展潛力深受市場矚目。雖然擁有非常優異的特性，但是至今電阻轉換效應的工作機制尚未被明確了解，對於材料特性的掌握度不足，因而材料的研究將扮演關鍵的角色。
本論文的方向主要集中在探討電極材料與鐠鈣錳氧（PCMO）薄膜特性對電阻轉換效應的影響性。藉由氧化物電極鎳酸鑭（LaNiO3）來降低PCMO薄膜的結晶溫度，並控制其具強烈（001）優選指向。透過PCMO薄膜鍍製於Pt/Ti/SiO2/Si及LNO/Pt/Ti/SiO2/Si兩種底電極基板上，並選用LNO或Pt兩種上電極材料相互對照，試圖了解電阻轉換效應(resistance-switching effect)的工作機制來源。研究發現電阻轉換效應的發生，推測與PCMO薄膜本身結晶特性及電阻層與電極間界面匹配性有關，其中以LNO/PCMO/LNO結構表現最為優異，高低電阻值的變化可高達100倍。並成功以導電性原子力顯微鏡觀察電阻轉換效應，利用導電性探針施加電壓在奈米區域寫入訊號，確實可以觀察到非揮發性記憶特性。

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