化學機械拋光為半導體製程中達到平坦化之眾多方法裡最有效的一種。隨著晶圓尺寸之提升，以及線寬不斷降低的發展趨勢，平坦化相關技術之提升勢在必行，因應不同製程之需求，拋光墊表面之情況也必須有所不同，對應不同需求，需使用不同的鑽石碟以不同的修整參數進行修整；在先前的研究[22]中，硬焊集結鑽石碟(Brazed Organic Diamond Disk) 相較於相同移除率之硬焊鑽石碟(Brazed Diamond Disk)，於延長拋光墊壽命以及移除率上表現相對穩定，但設計參數與修整參數之搭配變化並未於研究中提及。
本文由軌跡模擬以及理論推導的方式，討論在不同設計參數之改變對於鑽石碟之切深以及溝槽深度、修整率之影響，再導入實際修整時之修整參數，討論實際修整時設計參數與修整參數之搭配所造成之影響，本文所提之理論推導及模擬，可提供設計者與使用者參考之準則，本文所提出之交錯區域面積指標及均勻度，亦可提供評斷修整效能之參考。

Chemical Mechanical Polishing is the most effective method in the process of wafer planarization. As the size of silicon wafer and line width is improved, the development of the technique of planarization has been a crucial issue. Because surface circumstances of polishing pad differ from process to process, the type selection of diamond disk and the parameter in dressing must differ from process to process.
Previous research [22] shows that the stability of dressing rate and the ability of extending the life of polishing pad of BODD (Brazed Organic Diamond Disk) is better than BDD (Brazed Diamond Disk), which performs the same dressing rate. However, the influence in polishing pad cause by the change of the design is not mentioned.
This research discusses the cutting depth, the depth of groove and the dressing rate in the change of the design parameters by the model simulation and trajectory simulation. The influence of the change of dressing parameter is discussed by trajectory simulation on the other hand. The model and the simulation this research showed could provide users and designers to know how to design a BODD and use a BODD with their need. The index of the area of crossing region and the index of uniformity could also be the judgment of the property of the polishing pad dressed by BODD.
Key words: Chemical Mechanical Polishing, Diamond Disk, Diamond Trajectory.

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