本研究利用不同取代基修飾萘苯酸酐分子(naphthalene dianhyride)，合成新穎萘苯亞醯胺分子衍生物(naphthalene diimide derivatives)。並以旋轉塗佈的方式，將萘苯亞醯胺衍生物塗佈於二氧化矽(SiO2)與聚乙烯吡咯烷酮(PVP)為閘極氧化層之基板上。更進一步製作有機電晶體，並於一般大氣下量測有機電晶體場效特性及測試其在空氣中之穩定性，以應用於未來軟性電子元件之有機電晶體半導體材料。
為能達到未來軟性電子應用上低成本低溫(< 200 ºC)製程之要求，本研究著重於合成可溶性、可塗佈且於一般大氣環境下穩定之新穎n-type有機半導體材料。研究目標包括，第一，改善有機半導體材料於溶劑中之溶解度以達到溶液製程要求；第二，利用旋轉塗佈法製備有機半導體層之有機電晶體元件；第三，需於一般大氣環境中具有相當穩定性。結果顯示，成功地合成出分別為含烷基、含苯基、與含氟化苯基之萘苯亞醯胺衍生物(即NTCDI-C, NTCDI-P, 及NTCDI-F)，並於大氣環境下以旋轉塗佈法製備半導體薄膜層。以上三衍生物薄膜晶粒依序為2-3 □m、500-650 nm、與300-400 nm。且以萘苯亞醯胺衍生物為半導體層製作n-type有機電晶體，可於一般大氣環境中量得電晶體場效特性，其中NTCDI-P與NTCDI-F半導體層之有機電晶體元件電子遷移率皆約為10-3 cm2V-1s-1。將之放置於空氣中一週後，NTCDI-F元件之電子遷移率僅有稍微變化，故顯示NTCDI-F於一般大氣下具有一定穩定度。
綜而言之，本研究已完成在大氣下以低溫(< 200 ºC)溶液方法，製備萘苯亞醯胺衍生物NTCDI-F之新穎n-type有機半導體材料，及製作其有機電晶體元件，並在大氣下量得其電晶體場效特性，且此元件在空氣中具有相當穩定度。足以驗證此NTCDI-F新穎n-type有機半導體材料具備應用於未來軟性電子之可能性

This work is to synthesize new naphthalene diimide derivatives with different substituted side groups as organic semiconductor materials for future flexible electronic applications. Naphthalene diimide derivatives were spin-coated onto substrate via spin-coating process in air as semiconductor materials for OTFT fabrication using SiO2 or poly(vinyl- phenol) PVP as dielectrics. Electrical characteristics measurement and air-stability tests of OTFTs were carried out in air.
For low-cost and low temperature process of organic thin film transistor (OTFT) applications, this work is mainly focused on developing new soluble, high air-stability semiconducting materials. The studies include improving solubility of organic semiconductor materials, fabricating OTFT devices via spin-coating process in air, and increasing organic semiconductor air-stability. Results show that three n-type organic material, 1,4,5,8- naphthalene-tetracarboxylic diimide derivatives material with alkyl, phenyl, and (trifluoro-methyl)-benzyl groups (NTCDI-C, NTCDI-P, and NTCDI-F) were successfully synthesized and deposited on a SiO2/Si or PVP/SiO2 wafer by the spin-coating process in air. The grain sizes of above NTCDI-derivatives thin films were 2-3 □m, 500-650 nm, and 300-400 nm, respectively. Transistor characteristics of OTFTs using NTCDI-derivatives as semiconductor layers were measured in air, with the motilities of about 10-3 cm2V-1s-1 for NTCDI-F and NTCDI-P. The NTCDI-F OTFTs also exhibit air-stability with only slight mobility degradation after exposure in air for 7 days.
In a summary, a new solution-processed n-type semiconductor material, NTCDI-F, has been synthesized and investigated for OTFT fabrication via spin-coating process in air. Transistor characteristics and air-stability of OTFTs using NTCDI-F as semiconductor layers have been achieved. Results have demonstrated the feasibility of using solution-processed NTCDI-derivatives as semiconductors via spin- coating process in air for OTFT fabrication for future applications in flexible integrated circuits (ICs).

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