互補式金屬氧化半導體 (Complementary Metal Oxide Semiconductor，CMOS)半導體製程在台灣已是成熟的技術平台，利用CMOS平台發展出相關元件，例如光學微機電系統，有逐步增加的趨勢。透過CMOS-MEMS平台，製作光學微結構晶片，不僅可以利用半導體製程本身可縮小線寬和堆疊的結構，使其提高其附加價值，因此，CMOS技術之發展重要性越來越大。
本研究欲利用TSMC 0.35μm 2P4M CMOS標準製程設計Fabry-Perot干涉元件，利用二氧化矽層當作結構層，金屬層當作犧牲層，透過濕式蝕刻方式來實現微光機結構，本設計主要優點有兩項：(1)利用製程平台的蝕刻金屬層當作Fabry-Perot共振腔，Fabry-Perot共振腔穩定度高 (2)搭配致動器製作可動式Fabry-Perot 干涉元件，調變Fabry-Perot共振腔長度。量測結果驗證反射光的共振干涉波長，並藉由外部致動器調整其共振腔長度。

關鍵字:互補式金屬氧化物半導體，Fabry-Perot

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