研究生: |
王雪萍 |
---|---|
論文名稱: |
ITO導電奈米顆粒的製備與其應用於浸沾式塗佈法製備抗反射、抗眩及抗靜電光學膜 Preparation of ITO nanoparticles and their use in fabrication of anti-reflection, anti-glare, and anti-static optical films by dip coating |
指導教授: | 呂世源 |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
論文出版年: | 2008 |
畢業學年度: | 96 |
語文別: | 中文 |
論文頁數: | 76 |
中文關鍵詞: | 銦錫氧化物 、水熱法 、光學膜 |
外文關鍵詞: | ITO, hydrothermal, optical film |
相關次數: | 點閱:3 下載:0 |
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近年來,面板業愈來愈蓬勃發展,而光學膜如抗反射、抗靜電、增亮膜等的使用與研究也隨之大幅增加,本研究於已具有孔洞的高分子膜上,以浸沾方式塗佈ITO(Indium Tin Oxide)透明導電顆粒,以達到抗靜電的效果,同時降低反射率。文獻中製備ITO顆粒之方法以共沉澱和水熱法為主,本研究選擇以水熱法製備ITO顆粒。
我們使用三氧化銦與四氧化錫為先驅物,再藉由改變表面改質劑β-alanine之添加量、水熱反應溫度、反應時間及氨水添加量進行探討,發現添加β-alanine可使顆粒成長受到控制,但濃度增加至647.5mM後,產物由掺雜錫的In(OH)3轉為InOOH;當添加323.8mM β-alanine,反應時間縮短為3小時後,顆粒成長時間減少,正方晶形的In(OH)3顆粒尺寸可有效的縮小至17nm,但反應時間增加至48小時,In(OH)3脫水轉為形成InOOH;反應溫度由180 oC增加至200 oC時,反而使顆粒大小不均ㄧ,但平均尺寸明顯的增大了許多;較多的氨水參予反應時,產物顆粒約83nm,當減少氨水量時,產物為斜方晶形之InOOH。
水熱法產物經過鍛燒溫度及鍛燒時間的討論後,發現17nm之正方晶形In(OH)3以500 oC下鍛燒三小時,其粉末壓片之電阻值為2200Ω.cm,而聚集團(cluster)尺寸為224nm,此為最適合之鍛燒條件。以0.83wt% ITO奈米導電顆粒分散於水中,選擇以浸沾式塗佈法製備多功能光學膜,以浸沾拉速52cm/min塗佈三次製備出的光學膜效果最佳,穿透度可達86%,其電阻值為1.6×109Ω,可達到抗靜電的效果,又因塗佈奈米顆粒後,使得表面粗糙化,反射率降低至3.8%,達到抗眩之效用,故本實驗成功以浸沾式塗佈法製備抗反射、抗眩及抗靜電多功能光學膜。
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