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研究生: 陳信皓
Chen, Hsin-Hao
論文名稱: 直通矽晶穿孔數量與總繞線長的關係分析
Analysis of Relationship Between Number of TSV and Total Wirelength
指導教授: 黃婷婷
Hwang, TingTing
口試委員:
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 資訊工程學系
Computer Science
論文出版年: 2010
畢業學年度: 99
語文別: 中文
論文頁數: 32
中文關鍵詞: 直通矽晶
外文關鍵詞: TSV
相關次數: 點閱:2下載:0
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  • TSV(Through-Silicon-Via),中譯為直通矽晶穿孔,被視為是一個能夠實作三維度晶片(Three Dimensional Chip),且有效解決global interconnection問題的一個方法。但是實際上TSV本身也是佔有面積的,若使用了過量的TSV可能會帶來反效果而使得繞線長增加。本篇研究中,將探討TSV有面積的前提下,TSV的使用數量與總繞線長(Total wirelength)的關係。


    第一章 簡介 第二章 相關研究 第三章 不同模組數量下的分析 第四章 不同擺置法之下的分析 第五章 總結

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