本論文描述了一個應用照度偵測技術以及兩段式曝光讀取之高動態範圍互補式金氧半導體影像感測器，使影像感測晶片可以達到動態範圍延展的效果，並且不需要後級的訊號處理即可得到具有高動態範圍的影像。此論文貢獻了許多創先之處，首先是針對傳統的四電晶體主動式感測器提出了一個創新的操作方式，使其能夠在一張影像的時間內進行長曝光以及短曝光，並且不需要任何的外部影像處理來合成一張具有高動態範圍的影像。第二為照度偵測技術，藉由偵測部分訊號來判斷影像感測器所處環境光源大小，以此來消除前述操作方式在製程影響下的固定圖像雜訊，並且利用不同的長短曝光比以及不同的中間電壓值來提供可調整的轉折點，使其在不同的環境下皆能得到最佳的影像品質。
此兩段式曝光讀取之高動態範圍互補式金氧半導體影像感測器具有128×128像素陣列，每像素包含四個電晶體，像素大小為 6×6 um2 ，填充因子為32%，並以TSMC 0.18um 1P6M 互補式金氧半導體影像感測器製程製作。一個128×128的影像感測器應用這些技術後，量測結果顯示出在長短曝光時間比例為140.4時擁有98.9dB動態範圍，較未使用此技術的傳統四電晶體主動式感測器增加了37dB，1.07mV (0.097%) 欄固定圖像雜訊 (FPN) ，在強光條件下的像素固定圖像雜訊從97.4mV (8.85%) 減少至18.2mV (1.65%)。

This thesis describes a wide dynamic range dual exposure CMOS image sensor with illumination detection scheme to extend the dynamic range, and synthesize the images into a wide dynamic range scene without post signal processing. There are some innovations in this thesis. First, a novel operation for conventional 4T active pixel sensor is proposed so that it can proceed long exposure time and short time in a frame time, and does not require any external image processing to synthesize the wide dynamic range image. Second, an illumination detection scheme is used to reduce the fixed pattern noise (FPN) by process variation in above operation. By detecting the partial signal in the integration time, it can determine the illumination condition of the sensor. It provides a tunable transition point by using different exposure ratios and Vmid, making the sensor to obtain the best image quality in different environment.
The prototype wide dynamic range dual exposure readout CMOS image sensor chip is composed of a 128×128 4T-pixel array, and the pixel pitch is 6×6 um2 with 32%fill factor. It was fabricated in TSMC 0.18um 1P6M CMOS image sensor process. A prototype 128×128 imager employed these schemes experimentally achieves 98.9 dB dynamic range with the exposure time ratio of 144. Compared with conventional 4T-APS without these schemes, it increased 37 dB of dynamic range. The column FPN is 1.07mV (0.097%), and the pixel FPN is reduced from 97.4mV (8.85%) to 18.2mV (1.65%) under high illumination condition.

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