薄型矽晶太陽電池之基板與電池製造技術研究

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研究生：	杜政勳 Du, Chen-Hsun
論文名稱：	薄型矽晶太陽電池之基板與電池製造技術研究 The Substrate and Cell Manufacture Process of Thin Film Crystalline Silicon Solar Cell
指導教授：	葉哲良 Yeh, J. Andrew
口試委員:	甘炯耀 Gan, Jon-Yiew 羅丞曜 Lo, Cheng-Yao 余沛慈 Yu, Peichen 蔡松雨 Tsai, Song-Yeu
學位類別：	博士 Doctor
系所名稱：	工學院 - 奈米工程與微系統研究所 Institute of NanoEngineering and MicroSystems
論文出版年：	2015
畢業學年度：	103
語文別：	英文
論文頁數：	131
中文關鍵詞：	太陽電池、結晶矽、薄晶片
外文關鍵詞：	Solar cell, Crystalline silicon, Thin wafer
相關次數：	點閱：3 下載：0
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本論文研究超薄矽晶太陽電池之製作，尤其是無切割損太陽電池技術的相關技術，以減少矽晶太陽電池的矽材用量，促進矽晶太陽電池的成本之降低。在本論文中，我們首先針對薄型矽晶片的各種特性進行研究，其使用方法包括了電腦元件模擬，以探討矽的塊材品質、表面再結合速率、與晶片厚度對於太陽電池表現之影響，界定晶片薄化所造成的光吸收降低，為影響效率的最大因素。同時以化學減薄的方法製作不同結構的薄晶片太陽電池，包括標準結構太陽電池、選擇性射極太陽電池、以及背面鈍化太陽電池，發現低摻雜射極以及背表面鈍化，皆對於開路電壓及效率的提升有相當的效益，但最大的增益來自背面鈍化太陽電池的背面光反射效果所造成之光電流的提升。
另外，本論文嘗試了兩種無切割損的晶片及太陽電池製作方式，包括了熱應力圖案轉印以及金屬應力剝除法。熱應力圖案轉印法利用具有圖案化結構的藍寶石基板，在其上沉積矽膜後剝離，可將藍寶石基板的圖案轉印到矽基板上，製作無需光罩的奈米及蜂巢狀光吸收結構。而金屬應力剝除法，可自矽晶片上剝除約40微米的超薄矽層，在去除剝離金屬及玻璃狀殘留物後，配合異質接面太陽電池製程，可將效率提升到14.7%。這個結果提供了我們物理及實驗上的基礎，以做為未來發展無切割損高效率矽晶太陽電池的根基。

This thesis investigates the fabrication of thin crystalline silicon solar cell, especially the kerf-loss less solar cells. This technology can reduce the silicon usage of c-Si solar cell and decline its cost. In this study, we used the device simulation tool to discuss the effects of silicon bulk lifetime, surface recombination velocity, and wafer thickness to the properties of solar cell, and determined that the decline of light absorption is the main issue of thin crystalline solar cells. We also fabricated thin crystalline silicon solar cell of different structure, such as standard cell, selective emitter cell and PERC cells. The comparison of cell efficiencies showed that light doping emitter and surface passivation can improve the Voc. But the main improvement was due to the Jsc increase caused by the light reflection on the back surface of PERC cells.
Besides, this study suggested two kind processes of kerf-loss less wafers and cells, including Thermal-stress Induced Pattern Transfer (TIPT) and Stress induced Lift-off Method (SLiM-cut). TIPT method deposited Si thin layer on the patterned sapphire substrate. After exfoliated the Si layer using thermal stress, the pattern on the sapphire substrate was transformed to the Si thin layer. It can be used as the honeycomb surface texture for light absorption without any mask process.
SLiM-cut method can peeled off a Si thin film around 40m from a thicker substrate. After removing the metal and surface residual on the peeled silicon film, the HJT process was applied on the film to fabricate solar cells. The maximum efficiency of solar cells was up to 14.7%. This result provides a physical and experimental basis to develop non-kerf-loss thin crystalline solar cells whose performance can be further improved in the future.

Chapter I: Introduction    1
1 Background    1
2 Physics of crystalline silicon solar cell    3
3 Required properties of thin crystalline solar cell    7
4 Objectives    10
Chapter II: Review of thin crystalline silicon wafer and cell fabrication methods    12
1 Manufacture of thin crystalline silicon substrates    13
1.1 Direct wafer cutting    13
1.2 Smart cut    15
1.3 SLIM cut technology    17
1.4 Epitaxial growth silicon    20
1.5 Exfoliated epitaxially grown silicon    22
2 Improvement of efficiency of thin crystalline silicon solar cells    24
2.1 Light trapping    24
2.2 Surface passivation    29
3 Efficiencies of thin crystalline solar cells with various technologies    34
3.1 PERL structure    34
3.2 DFT solar cell    35
3.3 SLIM cut solar cell    36
3.4 Epitaxially grown crystalline solar cell    37
3.5 Exfoliated epitaxially grown crystalline solar cell    39
Chapter III: Basic properties of a thin crystalline solar cell    41
1 Properties of solar cells with various bulk lifetimes, surface recombination velocity and wafer thicknesses    43
2 Basic characterization of thin silicon substrate    49
2.1 Measurement of wafer lifetime    50
2.2 Optical characterization of thin crystalline silicon solar cell    54
3 Summary    56
Chapter IV: Device performance of thin Si solar cell    57
1 Electrical characterization of thin crystalline solar cell    57
1.1 Standard solar cell    57
1.2 Selective emitter solar cell    60
1.3 Rear side passivated solar cell    64
2 Summary    69
Chapter V: Fabrication of thin-film crystalline silicon solar cell using thermal stress-induced pattern transfer (TIPT) method    71
1 Wafer fabrication using TIPT method    71
1.1 Peeling condition of TIPT process    74
1.2 Optical properties of TIPT substrate    75
2 Cell fabrication using TIPT method    78
2.1 Electrical properties of high temperature peeled TIPT cell    78
2.2 Electrical properties of low temperature peeled TIPT cell    80
3 Summary    83
Chapter VI: Thin crystalline silicon solar cell using stress-induced lift-off method    85
1 Wafer fabrication using SLiM cut method    85
1.1 Peeling condition of SLiM cut process    86
1.2 Surface properties of different orientation exfoliated surface    90
2 Cell fabrication using SLiM cut method    95
2.1 Hetrojunction solar cell process on SLiM cut thin wafer    95
2.2 Surface improvement of SLiM cut solar cell    99
2.3 Electrical properties of SLiM cut solar cell    105
3 Summary    109
Chapter VII: Conclusion and Future work    110
1 Results    110
2 Future work    111
References:    113
Author’s Publications list    120
Journal Papers:    120
Conference Papers:    122
Patent    129
Author’s Resume    131
                                

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