氮化鈦/氧化鎵與氧化釓混合氧化物/砷化鎵及砷化銦鎵組合的金氧半二極體經過快速高溫退火至750oC高溫後依舊呈現極佳的電性及結構穩定性:如低閘極漏電流密度（10-8 - 10-9A/cm2）、在電壓-電容曲線特徵圖更中可得知氧化物擁有一個高介電常數特性以及低的介面能階密度（(2~6)×1011 cm-2eV-1）、並且在氧化物與半導體間呈現一個原子極平滑的穩定介面。
電子元件發展中，為了應映元件尺寸微縮，利用自我對準方法的元件製程製作反轉通道增強型N型金氧半場效電晶體，並研究探討金屬/氧化物/三五族半導體結構對於自我對準製程的相互需求及影響，使用通道材料為應變砷化銦鎵及砷化鎵、閘極氧化物為高介電常數氧化鎵與氧化釓混合物、閘極金屬則為氮化鈦。一個閘極線長及線寬分別為4及100微米的N型砷化銦鎵反轉通道增強型金氧半場效電晶體電性特徵如下:汲極電流為1.5 mA/mm at Vg=4V, Vd=2V；低閘極漏電流低於 <10-7A/cm2 ；非本質通道電導值為1.7 mS/mm at Vg=3V, Vd=2V；汲極電流開/關比值為105。砷化銦鎵及砷化銦鎵反轉通道增強型金氧半場效電晶體的關閉汲極漏電流亦低於10-5mA/mm，此外利用分離式電容電壓量測與元件電流的表現皆證明反轉通道的產生及氧化鎵與氧化釓混合氧化物/砷化銦鎵介面費米能階未被恰住。

TiN/Ga2O3(Gd2O3)[GGO]/GaAs and /In0.2Ga0.8As MOS diodes after rapid thermal annealing (RTA) to high temperatures of 750□C exhibit excellent electrical and structural performances: a low leakage current density of 10-8 - 10-9 A/cm2, well-behaved capacitance-voltage (C-V) characteristics giving a high dielectric constant of ~16 and a low interfacial density of state of ~(2~6)×1011 cm-2eV-1, and an atomically sharp smooth GGO/GaAs and /In0.2Ga0.8As interface.
A self-aligned process for fabricating inversion n-channel metal-oxide-semiconductor field-effect-transistors (MOSFET’s) of strained In0.2Ga0.8As- or GaAs-channel using TiN as gate metal and Ga2O3(Gd2O3) as high k gate dielectric has been developed. The In0.2Ga0.8As-channel NMOSFET with a 4 μm gate length and a 100 μm gate width exhibits a drain current of 1.5 mA/mm at Vg=4V and Vd=2V, a low gate leakage of <10-7A/cm2 at 1 MV/cm, an extrinsic transconductance of 1.7 mS/mm at Vg=3V, Vd=2V, and an on/off ratio of ~105 in drain current. Lower off-currents of ~10-5-10-6 mA/mm were measured on GaAs and In0.2Ga0.8As-channel NMOSFETs comparing with most of the previously results. Moreover, the split-CV and IV results certainly demonstrate the inversion n-channel on the TiN/GGO/In0.2Ga0.8As/GaAs NMOSFETs and the strong evidence of unpinned interface between GGO and In0.2Ga0.8As. But the split-CV results on TiN/GGO/GaAs NMOSFET indicate that the responding amount of carriers in the inversion region is not identical with that in the accumulation region in this work.

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