摘 要
本篇論文利用(一)Salicylaldehyde及衍生物與Aminophenol及衍生物合成之兩個質子解離的三配位原子配位基(二) naphthol 衍生物與aminophenol衍生物合成之兩個質子解離的三配位原子配位基(三) methoxybenzaldehyde衍生物 與 aminophenol衍生物合成之兩個質子解離的三配位原子配位基(四) pyridine衍生物與 aminophenol 衍生物合成之一個質子解離的三配位原子配位基(五) naphthol與 quinoline合成之一個質子解離的三配位原子配位基,其中任何兩種三配位亞胺配位基以混配位螯合的鈦˛鋁˛鎵˛銦, 的六配位八面體金屬錯合物，它們都有好的熱穩定性，經由X-ray繞射結構證實為八面體的 meridional 結構。
1.鈦金屬錯合物反應中，以鈦金屬起始物與單一種三配位亞胺配位基H2L，以1:2 比例合成TiL2 鈦金屬錯合物，以兩種三配位亞胺配位基混螯合 TiL1L2鈦金屬錯合物，以2當量HQ(2-hydroxyquinoline)反應得TiQ2(OPri)2產物90%，在少許水存在與TiQ2(OPri)2反應得【TiQ2(u-O)】4 nH2O嚴重扭曲八環結構為六配位鈦金屬錯合物。
Ti(OPri)4為起始物與HQ及三配位亞胺配位基H2A1B1混配位以Ti(OPri)4:HQ:H2A1B1=1:2:1反應24小時可得Ti(A1b1)2產物及 Ti(A1B1) Q(OCH3) 單品，改以1:10:1比例反應可得Ti(A1B1)222%產物，Ti(A1B1) Q(OCH3)37.1%的大量產物，在反應瓶中加入未除水CH3CN有機溶劑得【Ti(A1B1)Q】2(u-O)晶體，由1HNMR動力追蹤實驗以下列兩可逆反應表之:
TiQ2(OR)2+H2A1B1 Ti(A1B1)Q(OR)+HQ+ROH…(1)
Ti(A1B1)Q(OR)+H2A1B1 Ti(A1B1)2+HQ+ROH…(2)
由DFT-B3LYP/3-31G*的理論計算鈦金屬錯合物的HOMO電子雲分佈為aminophenol，當aminophenol 苯環上有拉電子基-cl取代，對UV-VIS吸收值往紅位移，正符合LUMO有拉電子基時親電子性加強 LUMO能位下降，使HOMO與 LUMO能位差Eg變小則紅位移的一致性。
2.鋁金屬錯合物合成反應是以兩種三配位亞胺配位基以兩步驟，未加強鹼的反應條件下混螯合成的鋁金屬錯合物，符合Pearson’s HSAB原理。產率高，熱穩定性好，溶點範圍350~400˚C，可變成100~175˚C，化合物UV吸收波長為400~460nm ;其中 PL ‘放光波長為 500~550nm，量子產率1~12%，經電化學CV方法測試及UV光譜計算得到鋁金屬錯合物的HOMO能階5.33~5.61 ev; LUMO能階2.50~2.47ev，此化合物之LUMO能階值(電子親合力)與常用電子傳輸層材料AlQ3 的LUMO值3.1lv相近，經由DFT-B3LYP/3-31G* 的理論計算鋁金屬錯合物HOMO電子雲分佈處為 Salicylaldehyde 與 aminophenol縮合含兩個質子解離三配位亞胺配位基，LUMO電子雲分佈處為Pyridine或 Quinoline 與aminophenol縮合含一個質子解離三配位亞胺配位基，由 Al(A1B1)(A6B3)化合物單晶，經過X-ray繞射証實為六配位入面體的meridional結構，UV-VIS吸收波長以Al(A1B1)(A6B3) 化合物的兩種三配位亞胺配位基的苯環推、拉電子基同時

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能符合 Dewar’s Rule。螢光性質隨配位基苯環推電子基-OH>-CH3>-OCH3的順序
增強，拉電子基-cl螢光減弱。 Hammett Equation取代常數 σ 值與鋁金屬錯合物的電化學 CV測試所得的 HOMO.LUMO能階值，氧化電位 (OX)，及HOMO與LUMO能階差Eg成線形關係。元件結構以陽極 ITO/電洞傳輸層TPD(50nm) / 電子傳輸層Al(A1B3)(A6B3)50nm/Mg:Ag，以電子傳輸層同時為發光層在外加電壓 13v 時有最大亮度 161Cd/m2 。放光波長為 630nm 為紅光。CIE值X=0.63,Y=0.37，量子效率:0.0167%，流明效率: 0.0241m/w。 電洞傳輸層改以NPB時，當外加電壓 14v時最大量度141.6Cd/m2。 放光波長627nm紅光，CIE值: X=0.59，Y=0.39，量子產率: 0.0144%，流明效率0.018 lm/w。 當Al(A1B3)(A6B3)化合物當放光層時，故TPD比NPB當電洞傳輸的效率好。 元件結構以ITO/電洞傳輸發光層TPD(30nm) /電洞阻礙層BCP(10nm)/ 電子傳輸層AlQ3(30nm)/Mg:Ag，AlQ3為電子傳輸層，改以(1)Al(A11B1)(A6B3) (2)Al(A10B1)(A6B3) (3) Al(A11B1)(A6B3)為電子傳輸層時，則TPD層的放光強度以 AlQ3 當電子傳輸層時 880Cd/m2 最高，Al(A1B1)(A6B3) 205.5Cd/m2次之，Al(A11B1)(A6B3) 125Cd/m2，Al(A10B1)(A6B3) 3.22Cd/m2最低。但 Al(A1B1)(A6B3)流明，電流效率，溶點比AlQ3 高。
3.鎵金屬錯合物合成反應是以兩種三配位基亞胺配位基在苯環有多個拉電子基取代時，不需外加強鹼條件下混配位螯合成鎵金屬錯合物，苯環沒有拉電子基取代須外加強鹼完成混配位螯合的鎵金屬錯合物，苯環有拉電子使共振範圍大ph-OH易解離H+與ph-0一 ，故 ph-0一穩定性好，配合鎵離子有效六配位半徑故混配位鎵金屬錯合物符合 Pearson HSAB原理。熱穩定性好，溶點範圍340~410˚C ， Tg點 120~178˚C 在元件應用上有很好的熱操作條件，化合物UV-VIS吸收波長為430~480nm，經由化學CV方法測試及 UV-VIS光譜計算得到鎵金屬化合物HOMO 能階 5.41~5.66ev，LUMO 能階 3.18~3.47ev此化合物 LUMO能階值(電子親和力)與常用電子傳輸材料 AlQ3的 LUMO值 3.1ev 相近，經由DFT-B3LYP/3-31G*的理論計算鎵金屬錯合物HOMO電子雲分佈處為 Salicylaldehyde 與 aminophenol 縮合含兩個質子解離三配位亞胺配位基，LUMO電子雲分佈處為 Pyridine 與 aminophenol 結合含一個質子解離三配位 亞胺配位基，由 Ga(A15B2)(A6B2) 化合物的單晶，經過 X-ray繞射証實為六配位八面體的 meridional結構，UV-VIS 吸收波長Ga(A2B4)(A6B1)，Ga(A3B4)(A6B1)的H2L1符合 Dewar’s Rule。Hammett Equation取代常數σ值與HOMO，LUMO 能階及能階差 Eg成線形關係。
4.銦金屬錯合物合成反應在未加強鹼反應條件只與一個質子解離的三配位亞胺配位基與Br一 及甲醇、水形成六配位八面體銦金屬錯合物，在強鹼溶液中兩種三配位亞胺配位基混螯合銦金屬錯合物符合Pearson HSAB原理。 單一種三配位亞胺配位基的銦金屬錯合物的溶點為200˚ C，兩種三配位亞胺配位基的銦金屬錯合物的熱穩定性好，溶點為 340~410˚ C，Tg點 100~183˚ C， 為元件製造上熱

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穩定的操作符合條件之一，化合物UV-VIS吸收波長為 440~530nm，經由化學 CV法則測試及 UV-VIS光譜計算得到銦金屬錯合物HOMO能階2.9~3.5ev; LUMO能階2.9~3.5ev，此銦金屬錯合物的能階值(電子親和力)與常用電子傳輸材料 LUMO的 3.1ev相近，在電子傳輸能障減少，兩種三配位亞胺配位基混螯合銦金屬錯合物在元件製作上為電子傳輸材料符合條件之二。In(A8B10)Br2單一種雙環配位基與2Br一 形成五配位銦金屬錯合物由 DFT-B3LYP/3-31G*的理論計算銦金屬錯合物 HOMO電子雲分佈處為銦金屬2-hyhroxy-1-naphthaldehyde(6-methyl -2-pyridine carboxaldehyde)的苯環佔大部份，LUMO 電子雲分佈處為 8-aminophenol 苯環上，由In(A8B10) Br2 X-ray繞射証實五配位結構為雙三角錐形，單三配位亞胺配位基銦金屬錯合物的 UV-VIS 吸收能量為銦金屬離子與溶劑甲醇或水的配位鍵能。銦金屬錯合物兩種亞胺配位基苯環上的推、拉電子取代基對 UV-VIS吸收波長以含兩個質子的解離的亞胺配位基符合 Dewar’s Rule。
Hammett Equation 取代常數值σ 與氧化電位OX(V) 及 HOMO & LUMO能階差Eg值成線形關係。藉由實驗數據與理論計算找出兩種三配位亞胺配位基螯合成的鋁、鎵、銦金屬錯合物的理想元件的電子傳輸材料

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