摘要
近年來一維奈米結構的特殊性質和技術應用引起了廣泛注意。本研究利用化學氣相沉積法於鉻塊上成長氧化鉻(III)奈米線，然後再利用掃描式電子顯微鏡，穿透式電子顯微鏡研究其微結構，並利用電子損失能譜與X光能譜來比對氧化鉻之電子躍遷組態。
由SEM圖可看出氧化鉻奈米線成長分佈情形，其線徑約為50~40 nm左右，TEM觀察到奈米線發現頂端有催化劑的反應，推測是由污染源而產生的催化反應，以此催化劑成長的奈米線，其成長機制為VLS機制。清潔石英管內部，再重新成長奈米線，並根據SEM及TEM的分析結果，發現清除汙染源後成長變為VS機制，成長形貌也並非是奈米線線徑約為90~100 nm左右形狀偏向片狀或棒狀，改變不同參數後成功長出線徑約30~40nm的奈米線。
利用電子損失能譜儀(Electron Energy Loss Spectroscopy,EELS)擷取電子損失能譜並經由一系列數值方法重建，得到其白線強度(White Line Intensity)，去計算不同持溫時間鉻的白線強度之比值(L3/L2 ration)分別為1.52及1.71判斷出Cr的價數。

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